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2N3496

Description
Small Signal Bipolar Transistor, 0.1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size59KB,1 Pages
ManufacturerElectronic Transistors Corp
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2N3496 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN

2N3496 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerElectronic Transistors Corp
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage80 V
ConfigurationSingle
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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