2N703 datasheet, PDF - EEWORLD Datasheet

2N703: DescriptionSmall Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, NPN, Silicon, TO-18, TO-18, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size111KB，1 Pages; ManufacturerInternational Devices Inc

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2N703 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, NPN, Silicon, TO-18, TO-18, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Devices Inc
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	25 V
Configuration	Single
Minimum DC current gain (hFE)	70
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

	2N703	2N3414
Description	Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, NPN, Silicon, TO-18, TO-18, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-98, TO-98, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Maker	International Devices Inc	International Devices Inc
Parts packaging code	BCY	TO-98
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-XBCY-W3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.05 A	0.5 A
Collector-emitter maximum voltage	25 V	25 V
Configuration	Single	Single
Minimum DC current gain (hFE)	70	75
JEDEC-95 code	TO-18	TO-98
JESD-30 code	O-MBCY-W3	O-XBCY-W3
JESD-609 code	e0	e0
Number of terminals	3	3
Maximum operating temperature	175 °C	160 °C
Package body material	METAL	UNSPECIFIED
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.36 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	100 MHz

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