Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Devices Inc |
| Parts packaging code | TO-5 |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.5 A |
| Collector-emitter maximum voltage | 30 V |
| Configuration | Single |
| Minimum DC current gain (hFE) | 50 |
| JEDEC-95 code | TO-5 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 100 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.2 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | GERMANIUM |
| Nominal transition frequency (fT) | 1 MHz |
| 2N651 | 2N465 | 2N526 | 2N527 | 2N652 | 2N652A | |
|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, PNP, Germanium, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | International Devices Inc | International Devices Inc | International Devices Inc | International Devices Inc | International Devices Inc | International Devices Inc |
| Parts packaging code | TO-5 | TO-5 | TO-5 | TO-5 | TO-5 | TO-5 |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 3 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.5 A | 0.1 A | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
| Collector-emitter maximum voltage | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Configuration | Single | Single | Single | Single | Single | Single |
| Minimum DC current gain (hFE) | 50 | 45 | 47 | 65 | 100 | 100 |
| JEDEC-95 code | TO-5 | TO-5 | TO-5 | TO-5 | TO-5 | TO-5 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 100 °C | 85 °C | 100 °C | 100 °C | 100 °C | 100 °C |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 0.2 W | 0.15 W | 0.225 W | 0.225 W | 0.2 W | 0.2 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | GERMANIUM | GERMANIUM | GERMANIUM | GERMANIUM | GERMANIUM | GERMANIUM |
| Nominal transition frequency (fT) | 1 MHz | 0.8 MHz | 1.3 MHz | 1.5 MHz | 1.2 MHz | 1.2 MHz |
| Number of components | 1 | 1 | - | 1 | 1 | 1 |
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