2N43 datasheet, PDF - EEWORLD Datasheet

2N43: DescriptionSmall Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, PNP, Germanium, METAL CAN PACKAGE; CategoryDiscrete semiconductor The transistor; File Size106KB，1 Pages; ManufacturerInternational Devices Inc

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2N43 Overview

Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, PNP, Germanium, METAL CAN PACKAGE

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Devices Inc
package instruction	CYLINDRICAL, O-MBCY-W
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	30 V
Configuration	Single
Minimum DC current gain (hFE)	30
JESD-30 code	O-MBCY-W
JESD-609 code	e0
Maximum operating temperature	85 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	GERMANIUM
Nominal transition frequency (fT)	1.3 MHz

	2N43	2N43A
Description	Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, PNP, Germanium, METAL CAN PACKAGE	Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, PNP, Germanium, CAN PACKAGE-3
Is it Rohs certified?	incompatible	incompatible
Maker	International Devices Inc	International Devices Inc
package instruction	CYLINDRICAL, O-MBCY-W	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.3 A	0.3 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	Single	Single
Minimum DC current gain (hFE)	30	30
JESD-30 code	O-MBCY-W	O-MBCY-W3
JESD-609 code	e0	e0
Maximum operating temperature	85 °C	85 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.15 W	0.15 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	GERMANIUM	GERMANIUM
Nominal transition frequency (fT)	1.3 MHz	1.3 MHz

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