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2N3646

Description
RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, TO-106, TO-106, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size113KB,1 Pages
ManufacturerInternational Devices Inc
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2N3646 Overview

RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, TO-106, TO-106, 4 PIN

2N3646 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Devices Inc
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W4
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity5 pF
Collector-emitter maximum voltage15 V
ConfigurationSingle
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-106
JESD-30 codeO-MBCY-W4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature125 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)350 MHz

2N3646 Related Products

2N3646 2N4264
Description RF Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, Silicon, NPN, TO-106, TO-106, 4 PIN Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, NPN, Silicon, TO-92, TO-92, 3 PIN
Is it Rohs certified? incompatible incompatible
Maker International Devices Inc International Devices Inc
Parts packaging code BCY TO-92
package instruction CYLINDRICAL, O-MBCY-W4 CYLINDRICAL, O-PBCY-W3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A
Collector-emitter maximum voltage 15 V 15 V
Configuration Single Single
Minimum DC current gain (hFE) 30 40
JEDEC-95 code TO-106 TO-92
JESD-30 code O-MBCY-W4 O-PBCY-W3
JESD-609 code e0 e0
Number of terminals 4 3
Maximum operating temperature 125 °C 135 °C
Package body material METAL PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.31 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 350 MHz 300 MHz
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