Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-77, TO-77, 8 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Devices Inc |
| Parts packaging code | TO-77 |
| package instruction | CYLINDRICAL, O-MBCY-W8 |
| Contacts | 8 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.03 A |
| Collector-emitter maximum voltage | 45 V |
| Minimum DC current gain (hFE) | 60 |
| JEDEC-95 code | TO-77 |
| JESD-30 code | O-MBCY-W8 |
| JESD-609 code | e0 |
| Number of terminals | 8 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 60 MHz |
| 2N2913 | 2N3642 | 2N929 | |
|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-77, TO-77, 8 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-105, TO-105, 4 PIN | Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, NPN, Silicon, TO-18, TO-18, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | International Devices Inc | International Devices Inc | International Devices Inc |
| Parts packaging code | TO-77 | TO-105 | BCY |
| package instruction | CYLINDRICAL, O-MBCY-W8 | CYLINDRICAL, O-XBCY-W4 | CYLINDRICAL, O-MBCY-W3 |
| Contacts | 8 | 4 | 3 |
| Reach Compliance Code | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.03 A | 0.5 A | 0.03 A |
| Collector-emitter maximum voltage | 45 V | 45 V | 45 V |
| Minimum DC current gain (hFE) | 60 | 40 | 60 |
| JEDEC-95 code | TO-77 | TO-105 | TO-18 |
| JESD-30 code | O-MBCY-W8 | O-XBCY-W4 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 |
| Number of terminals | 8 | 4 | 3 |
| Maximum operating temperature | 175 °C | 125 °C | 175 °C |
| Package body material | METAL | UNSPECIFIED | METAL |
| Package shape | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.3 W | 0.35 W | 1.8 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 60 MHz | 150 MHz | 30 MHz |
| Configuration | - | Single | Single |
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