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2N1309

Description
Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size110KB,1 Pages
ManufacturerInternational Devices Inc
Download Datasheet Parametric Compare View All

2N1309 Overview

Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN

2N1309 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Devices Inc
Parts packaging codeTO-5
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.3 A
ConfigurationSingle
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature85 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsGERMANIUM
Nominal transition frequency (fT)15 MHz

2N1309 Related Products

2N1309 2N1307
Description Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, PNP, Germanium, TO-5, TO-5, 3 PIN Small Signal Bipolar Transistor, 0.3A I(C), PNP, Germanium, TO-5, TO-5, 3 PIN
Is it Rohs certified? incompatible incompatible
Maker International Devices Inc International Devices Inc
Parts packaging code TO-5 TO-5
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 3 3
Reach Compliance Code unknow unknown
Maximum collector current (IC) 0.3 A 0.3 A
Configuration Single Single
Minimum DC current gain (hFE) 80 60
JEDEC-95 code TO-5 TO-5
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0
Number of terminals 3 3
Maximum operating temperature 85 °C 85 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.15 W 0.15 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials GERMANIUM GERMANIUM
Nominal transition frequency (fT) 15 MHz 10 MHz

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