2N1212 datasheet, PDF - EEWORLD Datasheet

2N1212: DescriptionPower Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size96KB，1 Pages; ManufacturerInternational Devices Inc

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Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN

Parameter Name	Attribute value
Maker	International Devices Inc
Parts packaging code	TO-61
package instruction	POST/STUD MOUNT, O-MUPM-X3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	60 V
Configuration	Single
Minimum DC current gain (hFE)	12
JEDEC-95 code	TO-61
JESD-30 code	O-MUPM-X3
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	3.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Nominal transition frequency (fT)	3 MHz

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