Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-98, TO-98, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Hi-Tron Semiconductor Corp |
Parts packaging code | TO-98 |
package instruction | CYLINDRICAL, O-XBCY-W3 |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum collector current (IC) | 0.5 A |
Collector-emitter maximum voltage | 25 V |
Configuration | Single |
Minimum DC current gain (hFE) | 180 |
JEDEC-95 code | TO-98 |
JESD-30 code | O-XBCY-W3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 160 °C |
Package body material | UNSPECIFIED |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 0.36 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | BOTTOM |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 100 MHz |
2N3415 | 2N3392 | |
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Description | Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-98, TO-98, 3 PIN | Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-98, TO-98, 3 PIN |
Is it Rohs certified? | incompatible | incompatible |
Maker | Hi-Tron Semiconductor Corp | Hi-Tron Semiconductor Corp |
Parts packaging code | TO-98 | TO-98 |
package instruction | CYLINDRICAL, O-XBCY-W3 | CYLINDRICAL, O-XBCY-W3 |
Contacts | 3 | 3 |
Reach Compliance Code | unknow | unknow |
ECCN code | EAR99 | EAR99 |
Maximum collector current (IC) | 0.5 A | 0.5 A |
Collector-emitter maximum voltage | 25 V | 25 V |
Configuration | Single | Single |
Minimum DC current gain (hFE) | 180 | 150 |
JEDEC-95 code | TO-98 | TO-98 |
JESD-30 code | O-XBCY-W3 | O-XBCY-W3 |
JESD-609 code | e0 | e0 |
Number of components | 1 | 1 |
Number of terminals | 3 | 3 |
Maximum operating temperature | 160 °C | 125 °C |
Package body material | UNSPECIFIED | UNSPECIFIED |
Package shape | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL |
Polarity/channel type | NPN | NPN |
Maximum power dissipation(Abs) | 0.36 W | 0.2 W |
Certification status | Not Qualified | Not Qualified |
surface mount | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM |
Transistor component materials | SILICON | SILICON |
Nominal transition frequency (fT) | 100 MHz | 100 MHz |