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TGL41-27

Description
Trans Voltage Suppressor Diode, 400W, 21.8V V(RWM), Unidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size122KB,1 Pages
ManufacturerInternational Semiconductor Inc
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Trans Voltage Suppressor Diode, 400W, 21.8V V(RWM), Unidirectional, 1 Element, Silicon

TGL41-27 Parametric

Parameter NameAttribute value
MakerInternational Semiconductor Inc
package instructionO-PELF-N2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum breakdown voltage29.7 V
Minimum breakdown voltage24.3 V
Breakdown voltage nominal value27 V
Shell connectionISOLATED
Maximum clamping voltage39.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PELF-N2
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage21.8 V
Maximum reverse current5 µA
surface mountYES
technologyAVALANCHE
Terminal formNO LEAD
Terminal locationEND

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