3N250 datasheet, PDF - EEWORLD Datasheet

3N250: DescriptionBridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon; CategoryDiscrete semiconductor diode; File Size97KB，1 Pages; ManufacturerInternational Semiconductor Inc

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Bridge Rectifier Diode, 1 Phase, 1.5A, 600V V(RRM), Silicon

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Semiconductor Inc
package instruction	R-PSIP-W4
Reach Compliance Code	unknow
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JESD-30 code	R-PSIP-W4
JESD-609 code	e0
Maximum non-repetitive peak forward current	30 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	1.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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