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HA1709EE-5%

Description
Variable Capacitance Diode, 4.7pF C(T), 30V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size69KB,1 Pages
ManufacturerMsi Electronics Inc
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HA1709EE-5% Overview

Variable Capacitance Diode, 4.7pF C(T), 30V, Silicon, Hyperabrupt

HA1709EE-5% Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionX-CXMW-F3
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio6.5
Nominal diode capacitance4.7 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeX-CXMW-F3
Number of components2
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeUNSPECIFIED
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor1050
Maximum reverse current0.02 µA
Reverse test voltage25 V
surface mountYES
Terminal formFLAT
Terminal locationUNSPECIFIED
Varactor Diode ClassificationHYPERABRUPT

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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