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2SC2412K

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size160KB,3 Pages
ManufacturerShandong Yiguang Electronic Joint Stock Co., Ltd.
Download Datasheet Parametric View All

2SC2412K Overview

Transistor

2SC2412K Parametric

Parameter NameAttribute value
MakerShandong Yiguang Electronic Joint Stock Co., Ltd.
package instruction,
Reach Compliance Codeunknow
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
2SC2412K
NPN EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
GENERAL PURPOSE TRANSISTOR
*
Feature:
Cob=2.0pF
(2) Complements the 2SA1037AK/2SA1576/
2SA1774/2SA1774H/2SA2029/2SA933AS.
(1) Low Cob.
Package:
SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Symbol
Vceo
Vcbo
Ic
P
D
Tj
Tstg
Rating
50
60
0.15
200
150
-55-150
Unit
V
V
A
mW
PIN:
STYLE
NO.1
B
E
C
1
2
3
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Vce(sat)
Cob
f
T
2
180
120
Min
60
50
7
0.1
0.1
560
0.4
3.5
V
PF
MHz
Typ
Max
Unit
V
V
V
uA
uA
Test Conditions
Ic= 50uA
Ic= 1mA
Ie= 50uA
Vcb= 60V
Veb=7V
Vce= 6V Ic= 1mA
Ic= 50mA Ib= 5mA
Vcb= 12V Ie=0 f=1MHz
Vce= 12V Ie= -2mA
f=100MHZ
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test: Pulse Width
≤300uS,Duty
cycle
≤2%
DEVICE MARKING:
2SC2412K=FR
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