2N2160 datasheet, PDF - EEWORLD Datasheet

2N2160: DescriptionUnijunction Transistor, 25uA I(P); CategoryDiscrete semiconductor The transistor; File Size127KB，2 Pages; ManufacturerSemiconductors Inc.

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2N2160 Overview

Unijunction Transistor, 25uA I(P)

Parameter Name	Attribute value
Maker	Semiconductors Inc.
package instruction	,
Reach Compliance Code	unknow
Maximum emitter current	70 mA
Maximum base-to-base voltage	35 V
maximum eigendeviation ratio	0.8
minimum intrinsic deviation ratio	0.47
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum peak current	25 mA
Maximum power dissipation(Abs)	0.45 W
Maximum static resistance between bases	12 kΩ
Minimum static resistance between bases	4 kΩ
surface mount	NO
Minimum valley point current	8 mA

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