EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

V73CBG02168RBJG6I

Description
DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA96,
Categorystorage    storage   
File Size2MB,57 Pages
ManufacturerProMOS Technologies Inc
Environmental Compliance
Download Datasheet Parametric Compare View All

V73CBG02168RBJG6I Overview

DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA96,

V73CBG02168RBJG6I Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerProMOS Technologies Inc
Reach Compliance Codecompli
Maximum access time0.4 ns
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
interleaved burst length8
JESD-30 codeR-PBGA-B96
memory density2147483648 bi
Memory IC TypeDDR DRAM
memory width16
Number of terminals96
word count134217728 words
character code128000000
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA96,9X16,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.35 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length8
Maximum standby current0.011 A
Maximum slew rate0.18 mA
Nominal supply voltage (Vsup)1.35 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM

V73CBG02168RBJG6I Related Products

V73CBG02168RBJG6I V73CBG02168RBJH7 V73CBG02168RBLJG6
Description DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA96, DDR DRAM, 128MX16, 0.3ns, CMOS, PBGA96, DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA96,
Is it Rohs certified? conform to conform to conform to
Maker ProMOS Technologies Inc ProMOS Technologies Inc ProMOS Technologies Inc
Reach Compliance Code compli compliant compli
Maximum access time 0.4 ns 0.3 ns 0.4 ns
Maximum clock frequency (fCLK) 400 MHz 533 MHz 400 MHz
I/O type COMMON COMMON COMMON
interleaved burst length 8 8 8
JESD-30 code R-PBGA-B96 R-PBGA-B96 R-PBGA-B96
memory density 2147483648 bi 2147483648 bit 2147483648 bi
Memory IC Type DDR DRAM DDR DRAM DDR DRAM
memory width 16 16 16
Number of terminals 96 96 96
word count 134217728 words 134217728 words 134217728 words
character code 128000000 128000000 128000000
Maximum operating temperature 85 °C 85 °C 85 °C
organize 128MX16 128MX16 128MX16
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code FBGA FBGA FBGA
Encapsulate equivalent code BGA96,9X16,32 BGA96,9X16,32 BGA96,9X16,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
power supply 1.35 V 1.35 V 1.35 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192
Continuous burst length 8 8 8
Maximum standby current 0.011 A 0.011 A 0.011 A
Maximum slew rate 0.18 mA 0.19 mA 0.18 mA
Nominal supply voltage (Vsup) 1.35 V 1.35 V 1.35 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level INDUSTRIAL OTHER OTHER
Terminal form BALL BALL BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号