2N5664, 2N5665, 2N5666, 2N5667
NPN High Voltage Power Silicon Transistor
Rev. V1
Features
•
Available in JAN, JANTX, JANTXV, JANS and JANSR per
MIL-PRF-19500/455
•
2N5664 and 2N5665 available in TO-66 package
•
2N5666 and 2N5667 are available in both TO-5 and TO-39
packages
•
2N5666 is available in the surface mount U3 version
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Breakdown Voltage Collector
-
Emitter
Test Conditions
I
C
= 10 mA dc, R
1
= 100
Ω
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
I
E
= 10 mA dc
Symbol
V
(BR)CER
Units
V dc
Min.
250
400
6
Max.
—
Breakdown Voltage Emitter
-
Base
V
(BR)EBO
V dc
—
Collector
-
Emitter Cutoff Current
V
CE
= 200 V dc 2N5664, 2N5666, 2N5666S
V
CE
= 300 V dc 2N5665, 2N5667, 2N5667S
I
CES1
µA dc
—
0.2
Collector
-
Base Cutoff Current
V
CB
= 200 Vdc 2N5664, 2N5666, 2N5666S
V
CB
= 250 Vdc 2N5664, 2N5666, 2N5666S
V
CB
= 300 V dc 2N5665, 2N5667, 2N5667S
V
CB
= 400 V dc 2N5665, 2N5667, 2N5667S
V
CE
= 2 V dc, I
C
= 0.5 A dc
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
V
CE
= 5 V dc, I
C
= 1.0 A dc
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
V
CE
= 5 V dc, I
C
= 3.0 A dc
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
V
CE
= 5 V dc, I
C
= 5.0 A dc
I
CBO
µA dc
mA dc
µA dc
mA dc
—
0.1
1.0
0.1
1.0
Forward
-
Current Transfer Ratio
h
FE1
40
25
40
25
15
10
5
120
75
Forward
-
Current Transfer Ratio
h
FE2
Forward
-
Current Transfer Ratio
h
FE3
Forward
-
Current Transfer Ratio
h
FE4
Collector
-
Emitter Saturation Voltage
I
C
= 3.0 A dc
I
B
= 0.3 A dc 2N5664, 2N5666, 2N5666S V
CE(sat)1
I
B
= 0.6 A dc 2N5665, 2N5667, 2N5667S
I
C
= 5.0 A dc, I
B
= 1 A dc
V
CE(sat)2
V dc
0.4
Collector
-
Emitter Saturation Voltage
1
V dc
1.0
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for additional data sheets and product information.
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2N5664, 2N5665, 2N5666, 2N5667
NPN High Voltage Power Silicon Transistor
Rev. V1
Electrical Characteristics (T
A
= +25
o
C unless otherwise specified)
Parameter
Test Conditions
Symbol Units
Min.
Max.
Base
-
Emitter Saturation Voltage
I
C
= 3.0 A dc
I
B
= 0.3 A dc 2N5664, 2N5666, 2N5666S V
BE(sat)1
I
B
= 0.6 A dc 2N5665, 21N5667, 2N5667S
V dc
1.2
Base
-
Emitter Saturation Voltage
I
C
= 5.0 A dc, I
B
= 1 A dc
V
BE(sat)2
V dc
1.5
Collector
-
Emitter Cutoff Current
T
A
= 150
o
C
V
CE
= 200 V dc 2N5664, 2N5666, 2N5666S
V
CE
= 300 V dc 2N5665, 2N5667, 2N5667S
T
A
=
-55
o
C
I
CES2
µA dc
—
100
Forward
-
Current Transfer Ratio
V
CE
= 5 V dc, I
C
= 1.0 A dc
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
h
FE5
15
10
Dynamic Characteristics
Magnitude of Common-Emitter Small
-
Signal Short
-
Circuit Forward
-Current
Transfer Ratio
Open-Circuit Output Capacitance
Pulse Response
Turn-On Time
V
CC
= 100V dc, I
C
= 1.0 A dc,
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
V
CC
= 100V dc, I
C
= 1.0 A dc,
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
t
on
µs
—
0.25
V
CE
= 5 V dc, I
C
= 0.5 A dc, f = 10 MHz
| h
FE
|
2.0
7.0
V
CB
= 10 V dc, 100 kHz ≤ f ≤ 1 MHz
C
obo
pF
—
120
Turn-Off Time
t
off
µs
—
1.5
2.0
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5664, 2N5665, 2N5666, 2N5667
NPN High Voltage Power Silicon Transistor
Rev. V1
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise specified)
Ratings
Symbol
Max. Value
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Junction and Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
I
B
T
stg
+ T
J
2N5664, 2N5666, S; 2N5666U3
2N5665, 2N5667, S
2N5664, 2N5666, S; 2N5666U3
2N5665, 2N5667, S
6 V dc
5 A dc
1 A dc
-65
o
C to + 200
o
C
250 V dc
400 V dc
200 V dc
300 V dc
Thermal Characteristics
Thermal Resistance, Junction to Ambient
2N5664
2N5665
2N5666, 2N5666S
2N5666U3
2N5667, 2N5667S
Thermal Resistance, Junction to Case
2N5664
2N5665
2N5666, 2N5666S
2N5666U3
2N5667, 2N5667S
Symbol
Max. Value
R
θJA
(2)
70°C/W
70°C/W
145°C/W
116°C/W
145°C/W
2.6°C/W
2.6°C/W
6.7
o
C/W
2.3
o
C/W
6.7
o
C/W
R
θJC
(2)
(2) For thermal impedance see figures 12, 13, 14 and 15 of MIL-PRF-19500/455
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5664, 2N5665, 2N5666, 2N5667
NPN High Voltage Power Silicon Transistor
Rev. V1
Absolute Maximum Ratings ( T
A
= +25
o
C unless otherwise specified)
Characteristics
T
A
= +25
o
C
2N5664
2N5665
2N5666, 2N5666L
2N5666U3
2N5667, 2N5667S
T
C
= +100
o
C
2N5664
2N5665
2N5666, 2N5666L
2N5666U3
2N5667, 2N5667S
(1)
Symbol
Max. Value
P
T (1)
2.5 W
2.5 W
1.2 W
1.5 W
1.2 W
P
T (2)
30 W
30 W
15 W
35 W
15 W
For derating see figures 7, 8, 9, 10 and 11 of MIL-PRF-19500/455
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
DC Tests:
Test 1:
Test 2:
Test 3:
T
C
= +100°C; I Cycle; t >1.0s; t
r
+ t
f
= 10 µs
V
CE
= 6 V dc; I
C
= 5 A dc
V
CE
= 32 V dc; I
C
= 0.75 A dc
V
CE
= 40 V dc; I
C
= 0.75 A dc
V
CE
= 200 V dc; I
C
= 29 mA dc
V
CE
= 300 V dc; I
C
= 21 mA dc
2N5664, 2N5665
2N5664
2N5665
2N5664
2N5665
T
C
= +100°C; I Cycle; t >1.0s; t
r
+ t
f
= 10 µs
V
CE
= 3.0 V dc; I
C
= 5 A dc
V
CE
= 29 V dc; I
C
= 0.4 A dc
V
CE
= 37.5 V dc; I
C
= 0.4 A dc
V
CE
= 200 V dc; I
C
= 19 mA dc
V
CE
= 300 V dc; I
C
= 14 mA dc
2N5666, 2N5666S, 2N5667, 2N5667S
2N5666, 2N5666S
2N5667, 2N5667S
2N5666, 2N5666S
2N5667, 2N5667S
Safe Operating Area (Switching)
Load condition B (clamped inductive load). T
C
= + 100
o
C, t
r
+ t
f
< 10 µs, duty cycle < 2 percent; t
p
= 4 ms; R
S
= 0.5Ω,
R
BB1
= 50
Ω,
V
BB1
= 50 V dc, R
BB2
= 50
Ω,
V
BB2
=
-4
V dc, I
C
= 5 A dc, V
CC
= 50 V dc, R
L
< 2.5
Ω,
L = 40 mH (Triad C-48U or
equivalent)
Clamp voltage = 200 +0,
-5
V dc
Clamp voltage = 300 +0,
-5
V dc
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5664, 2N5666, 2N5666S
2N5665, 2N5667, 2N5667S
2N5664, 2N5665, 2N5666, 2N5667
NPN High Voltage Power Silicon Transistor
Rev. V1
Outline Drawing (TO-66)
5
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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