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2SK958

Description
Power Field-Effect Transistor, 2A I(D), 900V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, SC-46, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size619KB,5 Pages
ManufacturerFuji Electric Co., Ltd.
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2SK958 Overview

Power Field-Effect Transistor, 2A I(D), 900V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, SC-46, 3 PIN

2SK958 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFuji Electric Co., Ltd.
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (Abs) (ID)2 A
Maximum drain current (ID)2 A
Maximum drain-source on-resistance8.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)45 W
Maximum pulsed drain current (IDM)6 A
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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