TD62506P datasheet, PDF - EEWORLD Datasheet

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TD62506P: Description7 SINGLE DRIVER; CategoryDiscrete semiconductor The transistor; File Size332KB，9 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TD62506P Overview

7 SINGLE DRIVER

TD62506P Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	DIP
package instruction	PLASTIC, DIP-16
Contacts	16
Reach Compliance Code	unknow
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	35 V
Configuration	COMMON COLLECTOR, 7 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDIP-T16
JESD-609 code	e0
Number of components	7
Number of terminals	16
Maximum operating temperature	85 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	0.8 V
Base Number Matches	1

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TD62506P Related Products

	TD62506P	AD62501P	TD62507P	TD62507F	TD62506F	TD62505F	TD62504P	TD62504F	TD62505P
Description	7 SINGLE DRIVER	7 SINGLE DRIVER	7 SINGLE DRIVER	7 SINGLE DRIVER	7 SINGLE DRIVER	7 SINGLE DRIVER	7 SINGLE DRIVER	7 SINGLE DRIVER	7 SINGLE DRIVER
Is it Rohs certified?	incompatible	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	-	DIP	SOIC	SOIC	SOIC	DIP	SOIC	DIP
package instruction	PLASTIC, DIP-16	-	PLASTIC, DIP-16	PLASTIC, SOP-16	PLASTIC, SOP-16	SMALL OUTLINE, R-PDSO-G16	IN-LINE, R-PDIP-T16	PLASTIC, SOP-16	PLASTIC, DIP-16
Contacts	16	-	16	16	16	16	16	16	16
Reach Compliance Code	unknow	-	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Maximum collector current (IC)	0.2 A	-	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	35 V	-	35 V	35 V	35 V	35 V	35 V	35 V	35 V
Configuration	COMMON COLLECTOR, 7 ELEMENTS WITH BUILT-IN RESISTOR	-	SEPARATE, 5 ELEMENTS	SEPARATE, 5 ELEMENTS	COMMON COLLECTOR, 7 ELEMENTS WITH BUILT-IN RESISTOR	COMMON COLLECTOR, 7 ELEMENTS	COMMON EMITTER, 7 ELEMENTS WITH BUILT-IN RESISTOR	COMMON EMITTER, 7 ELEMENTS WITH BUILT-IN RESISTOR	COMMON COLLECTOR, 7 ELEMENTS
Minimum DC current gain (hFE)	70	-	70	70	70	70	50	50	70
JESD-30 code	R-PDIP-T16	-	R-PDIP-T16	R-PDSO-G16	R-PDSO-G16	R-PDSO-G16	R-PDIP-T16	R-PDSO-G16	R-PDIP-T16
JESD-609 code	e0	-	e0	e0	-	-	e0	-	e0
Number of components	7	-	5	5	7	7	7	7	7
Number of terminals	16	-	16	16	16	16	16	16	16
Maximum operating temperature	85 °C	-	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE
Polarity/channel type	NPN	-	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	NO	YES	YES	YES	NO	YES	NO
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
VCEsat-Max	0.8 V	-	0.8 V	0.8 V	0.8 V	0.8 V	0.8 V	0.8 V	0.8 V
Base Number Matches	1	-	-	1	1	-	-	1	1
Peak Reflow Temperature (Celsius)	-	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Maximum time at peak reflow temperature	-	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

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