MSM5117400D-70TS-K datasheet, PDF

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MSM5117400D-70TS-K: DescriptionFast Page DRAM, 4MX4, 70ns, CMOS, PDSO24; Categorystorage storage; File Size161KB，14 Pages; ManufacturerLAPIS Semiconductor Co., Ltd.

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MSM5117400D-70TS-K Overview

Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24

MSM5117400D-70TS-K Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LAPIS Semiconductor Co., Ltd.
package instruction	TSOP, TSOP24/26,.36
Reach Compliance Code	unknow
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G24
JESD-609 code	e0
memory density	16777216 bi
Memory IC Type	FAST PAGE DRAM
memory width	4
Number of terminals	24
word count	4194304 words
character code	4000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP24/26,.36
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	5 V
Certification status	Not Qualified
refresh cycle	2048
self refresh	NO
Maximum standby current	0.001 A
Maximum slew rate	0.085 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL

MSM5117400D-70TS-K Preview

Semiconductor

MSM5117400D

4,194,304-Word

4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

This version: Jun. 2000

DESCRIPTION

The MSM5117400D is a 4,194,304-word

4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

technology. The MSM5117400D achieves high integration, high-speed operation, and low-power consumption

because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The

MSM5117400D is available in a 26/24-pin plastic SOJ, 26/24-pin plastic TSOP.

FEATURES

•

4,194,304-word

4-bit configuration

Single 5V power supply,

±10%

tolerance

Input

Output

Refresh

: TTL compatible, low input capacitance

: TTL compatible, 3-state

: 2048 cycles/32 ms

Fast page mode, read modify write capability

•

CAS before RAS refresh, hidden refresh, RAS-only refresh capability

Multi-bit test mode capability

Package options:

26/24-pin 300mil plastic SOJ

26/24-pin 300mil plastic TSOP

(SOJ26/24-P-300-1.27)

(TSOPII26/24-P-300-1.27-K)

(Product : MSM5117400D-xxSJ)

(Product : MSM5117400D-xxTS-K)

xx : indicates speed rank.

PRODUCT FAMILY

Family

MSM5117400D-50

MSM5117400D-60

MSM5117400D-70

Access Time (Max.)

RAC

50ns

60ns

70ns

25ns

30ns

35ns

CAC

13ns

15ns

20ns

OEA

13ns

15ns

20ns

Cycle Time

(Min.)

90ns

110ns

130ns

Power Dissipation

Operating (Max.)

550mW

495mW

440mW

5.5mW

Standby (Max.)

1/14

MSM5117400D

PIN CONFIGRATION (TOP VIEW)

DQ1

DQ2

RAS

DQ4

DQ3

CAS

DQ1

DQ2

RAS

DQ4

DQ3

CAS

A10 8

A0 9

A1 10

A2 11

A3 12

A10 8

A0 9

A1 10

A2 11

A3 12

26/24-Pin Plastic SOJ

26/24-Pin Plastic TSOP

(K Type)

Pin Name

A0–A10

RAS

CAS

DQ1–DQ4

Function

Address Input

Row Address Strobe

Column Address Strobe

Data Input/Data Output

Output Enable

Write Enable

Power Supply (5V)

Ground (0V)

No Connection

2/14

MSM5117400D

BLOCK DIAGRAM

RAS

CAS

Timing

Generator

Timing

Generator

Write

Clock

Generator

Internal

Address

Counter

Row

Address

Buffers

Refresh

Control Clock

Sense Amplifiers

I/O

Selector

Input

Buffers

Output

Buffers

Column

Address

Buffers

Column Decoders

A0 – A10

DQ1 - DQ

Row

Deco-

ders

Word

Drivers

Memory

Cells

On Chip

Generator

3/14

MSM5117400D

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings

Parameter

Voltage

Any Pin Relative to V

Voltage V

supply Relative to V

Short Circuit Output Current

Power Dissipation

Operating Temperature

Storage Temperature

Symbol

, V

OUT

opr

stg

*: Ta = 25°C

Rating

−0.5

to V

0.5

0.5 to 7.0

0 to 70

−55

to 150

Unit

°C

Recommended Operating Conditions

(Ta = 0°C to 70°C)

Parameter

Power Supply Voltage

Input High Voltage

Input Low Voltage

Symbol

Min.

4.5

2.4

−0.5

Typ.

5.0



Max.

5.5

Unit

0.5

0.8

Notes:

*1. The input voltage is V

2.0V when the pulse width is less than 20ns (the pulse width is with

respect to the point at which V

is applied).

*2. The input voltage is V

−

2.0V when the pulse width is less than 20ns (the pulse width respect to

the point at which V

is applied).

Capacitance

= 5V ± 10%, Ta = 25°C, f=1MHz)

Parameter

Input Capacitance (A0 – A10)

Input Capacitance

(RAS, CAS, WE, OE)

Output Capacitance (DQ1 – DQ4)

Symbol

Typ.



Max.

Unit

IN1

IN2

I/O

4/14

MSM5117400D

DC Characteristics

= 5V ± 10%, Ta = 0°C to 70°C)

MSM5117400 MSM5117400 MSM5117400

D-50

D-60

D-70

Unit

Min.

Output High Voltage

Output Low Voltage

Input Leakage

Current

Output Leakage

Current

Average Power

Supply Current

(Operating)

Power Supply

Current

(Standby)

Average Power

Supply Current

(RAS-only Refresh)

Power Supply

Current

(Standby)

Average Power

Supply Current

(CAS before RAS

Refresh)

Average Power

Supply Current

(Fast Page Mode)

−5.0mA

= 4.2mA

≤

6.5V ;

All other pins not

under test = 0V

DQ disable

≤

RAS, CAS cycling,

= Min.

RAS, CAS = V

CC2

RAS, CAS

≥

– 0.2V

RAS cycling,

CC3

CAS = V

= Min.

RAS = V

CC5

CAS = V

DQ = enable

RAS = cycling,

CAS before RAS

RAS = V

CC7

CAS cycling,

= Min.



1,3



100



1,2

−10

µA

2.4

Max

0.4

Min.

2.4

Max

0.4

Min.

2.4

Max

0.4

Parameter

Symbol

Condition

Note

−10

µA

CC1



100



1,2

CC6



100



1,2

Notes: 1.

Max. is specified as I

for output open condition.

The address can be changed once or less while RAS = V

The address can be changed once or less while CAS = V

5/14

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MSM5117400D-70TS-K Related Products

	MSM5117400D-70TS-K	MSM5117400D-60SJ
Description	Fast Page DRAM, 4MX4, 70ns, CMOS, PDSO24	Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24
Maker	LAPIS Semiconductor Co., Ltd.	LAPIS Semiconductor Co., Ltd.
package instruction	TSOP, TSOP24/26,.36	SOJ, SOJ24/26,.34
Reach Compliance Code	unknow	unknow
Maximum access time	70 ns	60 ns
I/O type	COMMON	COMMON
JESD-30 code	R-PDSO-G24	R-PDSO-J24
memory density	16777216 bi	16777216 bi
Memory IC Type	FAST PAGE DRAM	FAST PAGE DRAM
memory width	4	4
Number of terminals	24	24
word count	4194304 words	4194304 words
character code	4000000	4000000
Maximum operating temperature	70 °C	70 °C
organize	4MX4	4MX4
Output characteristics	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP	SOJ
Encapsulate equivalent code	TSOP24/26,.36	SOJ24/26,.34
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE
power supply	5 V	5 V
Certification status	Not Qualified	Not Qualified
refresh cycle	2048	2048
self refresh	NO	NO
Maximum standby current	0.001 A	0.001 A
Maximum slew rate	0.085 mA	0.09 mA
Nominal supply voltage (Vsup)	5 V	5 V
surface mount	YES	YES
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	J BEND
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL

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