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2N2217

Description
RF Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, Silicon, NPN, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size332KB,3 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

2N2217 Overview

RF Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, Silicon, NPN, TO-5, TO-5, 3 PIN

2N2217 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Parts packaging codeTO-5
package instructionTO-5, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-based maximum capacity8 pF
Collector-emitter maximum voltage30 V
ConfigurationSingle
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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