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40HFL80S10

Description
40 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AB
CategoryDiscrete semiconductor    diode   
File Size2MB,12 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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40HFL80S10 Overview

40 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AB

40HFL80S10 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-5
package instructionO-MUPM-D1
Contacts1
Reach Compliance Code_compli
Other featuresFREE WHEELING DIODE
applicationFAST RECOVERY HIGH POWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.9 V
JEDEC-95 codeDO-203AB
JESD-30 codeO-MUPM-D1
JESD-609 codee3
Maximum non-repetitive peak forward current500 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current40 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time1 µs
surface mountNO
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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