INTEGRATED CIRCUITS
DATA SHEET
TDA7010T
FM radio circuit
Product specification
File under Integrated Circuits, IC01
September 1983
Philips Semiconductors
Product specification
FM radio circuit
GENERAL DESCRIPTION
TDA7010T
The TDA7010T is a monolithic integrated circuit for mono FM portable radios, where a minimum on peripheral
components is important (small dimensions and low costs).
The IC has an FLL (Frequency-Locked-Loop) system with an intermediate frequency of 70 kHz. The i.f. selectivity is
obtained by active RC filters. The only function which needs alignment is the resonant circuit for the oscillator, thus
selecting the reception frequency. Spurious reception is avoided by means of a mute circuit, which also eliminates too
noisy input signals. Special precautions are taken to meet the radiation requirements.
The TDA7010T includes the following functions:
•
R.F. input stage
•
Mixer
•
Local oscillator
•
I.F. amplifier/limiter
•
Phase demodulator
•
Mute detector
•
Mute switch
QUICK REFERENCE DATA
Supply voltage range (pin 4)
Supply current at V
P
= 4,5 V
R.F. input frequency range
Sensitivity for
−3
dB limiting
(e.m.f. voltage)
(source impedance: 75
Ω;
mute disabled)
Signal handling (e.m.f. voltage)
(source impedance: 75
Ω)
A.F. output voltage at R
L
= 22 kΩ
PACKAGE OUTLINE
16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 July 24.
EMF
V
o
typ.
typ.
200 mV
75 mV
EMF
typ.
1,5
µV
V
P
I
P
f
rf
2,7 to 10 V
typ.
8 mA
1,5 to 110 MHz
September 1983
2
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
Fig.1 Block diagram.
September 1983
3
Philips Semiconductors
Product specification
FM radio circuit
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage (pin 4)
Oscillator voltage (pin 5)
Total power dissipation
Storage temperature range
Operating ambient temperature range
V
P
V
6-5
T
stg
T
amb
max.
TDA7010T
12 V
V
P
−0,5
to V
P
+
0,5 V
−55
to
+
150
°C
0 to
+
60
°C
see derating curve Fig.2
Fig.2 Power derating curve.
D.C. CHARACTERISTICS
V
P
= 4,5 V; T
amb
25
°C;
measured in Fig.4; unless otherwise specified
PARAMETER
Supply voltage (pin 4)
Supply current
at V
P
= 4,5 V
Oscillator current (pin 5)
Voltage at pin 12
Output current at pin 2
Voltage at pin 2; R
L
= 22 kΩ
I
P
I
5
V
12-14
I
2
V
2-14
−
−
−
−
−
8
280
1,35
60
1,3
−
−
−
−
−
mA
µA
V
µA
V
SYMBOL
V
P
MIN.
2,7
TYP.
4,5
MAX.
10
V
UNIT
September 1983
4
Philips Semiconductors
Product specification
FM radio circuit
TDA7010T
A.C. CHARACTERISTICS
V
p
= 4,5 V; T
amb
= 25
°C;
measured in Fig.4 (mute switch open, enabled); f
rf
= 96 MHz (tuned to max. signal at 5
µV
e.m.f.) modulated with
∆f
=
±22,5
kHz; f
m
= 1 kHz; EMF = 0,2 mV (e.m.f. voltage at a source impedance of 75
Ω);
r.m.s.
noise voltage measured unweighted (f = 300 Hz to 20 kHz); unless otherwise specified.
PARAMETER
Sensitivity (see Fig.3)
(e.m.f. voltage)
for
−3
dB limiting;
muting disabled
for
−3
dB muting
for S/N = 26 dB
Signal handling (e.m.f. voltage)
for THD < 10%;
∆f
=
±
75 kHz
Signal-to-noise ratio
Total harmonic distortion
at
∆f
=
±
22,5 kHz
at
∆f
=
±
75 kHz
AM suppression of output voltage
(ratio of the AM output signal
referred to the FM output signal)
FM signal: f
m
= 1 kHz;
∆f
=
±
75 kHz
AM signal: f
m
= 1 kHz; m = 80%
Ripple rejection (∆V
P
= 100 mV; f = 1 kHz)
Oscillator voltage (r.m.s. value) at pin 5
Variation of oscillator frequency
with supply voltage (∆V
P
= 1 V)
Selectivity
A.F.C. range
Audio bandwidth at
∆V
o
= 3 dB
measured with pre-emphasis (t = 50
µs)
A.F. output voltage (r.m.s. value)
at R
L
= 22 kΩ
Load resistance
at V
P
= 4,5 V
at V
P
= 9,0 V
R
L
R
L
−
−
−
−
22
47
kΩ
kΩ
V
o(rms)
−
75
−
mV
B
−
10
−
kHz
∆f
osc
S
+300
S
−300
∆f
rf
−
−
−
−
60
43
28
±
300
−
−
−
−
kHz/V
dB
dB
kHz
AMS
RR
V
5-4(rms)
−
−
−
50
10
250
−
−
−
dB
dB
mV
THD
THD
−
−
0,7
2,3
−
−
%
%
EMF
S/N
−
−
200
60
−
−
mV
dB
EMF
EMF
EMF
−
−
−
1,5
6
5,5
−
−
−
µV
µV
µV
SYMBOL
MIN.
TYP.
MAX.
UNIT
September 1983
5
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