EPROM, 32KX8, 450ns, CMOS, CDIP28,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | VLSI |
Reach Compliance Code | unknow |
Maximum access time | 450 ns |
I/O type | COMMON |
JESD-30 code | R-XDIP-T28 |
JESD-609 code | e0 |
memory density | 262144 bi |
memory width | 8 |
Number of terminals | 28 |
word count | 32768 words |
character code | 32000 |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 32KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
power supply | 5 V |
Programming voltage | 12.5 V |
Certification status | Not Qualified |
Filter level | 38535Q/M;38534H;883B |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
VM27C256-45CMB | VM27C256-25KMB | VM27C256-20KMB | VM27C256-20AMB | VM27C256-25CMB | VM27C256-35AMB | VM27C256-35CMB | VM27C256-35KMB | |
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Description | EPROM, 32KX8, 450ns, CMOS, CDIP28, | EPROM, 32KX8, 250ns, CMOS, CQCC32, | EPROM, 32KX8, 200ns, CMOS, CQCC32, | EPROM, 32KX8, 200ns, CMOS, CDIP28, | UVPROM, 32KX8, 250ns, CMOS, CDIP28, | EPROM, 32KX8, 350ns, CMOS, CDIP28, | EPROM, 32KX8, 350ns, CMOS, CDIP28, | EPROM, 32KX8, 350ns, CMOS, CQCC32, |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Reach Compliance Code | unknow | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
Maximum access time | 450 ns | 250 ns | 200 ns | 200 ns | 250 ns | 350 ns | 350 ns | 350 ns |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-XDIP-T28 | R-XQCC-N32 | R-XQCC-N32 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XQCC-N32 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
memory density | 262144 bi | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
Number of terminals | 28 | 32 | 32 | 28 | 28 | 28 | 28 | 32 |
word count | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
character code | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
organize | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
encapsulated code | DIP | QCCN | QCCN | DIP | DIP | DIP | DIP | QCCN |
Encapsulate equivalent code | DIP28,.6 | LCC32,.45X.55 | LCC32,.45X.55 | DIP28,.6 | DIP28,.6 | DIP28,.6 | DIP28,.6 | LCC32,.45X.55 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER |
power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Programming voltage | 12.5 V | 12.5 V | 12.5 V | 12.5 V | 12.5 V | 12.5 V | 12.5 V | 12.5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Filter level | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | NO | YES | YES | NO | NO | NO | NO | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD |
Terminal pitch | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm |
Terminal location | DUAL | QUAD | QUAD | DUAL | DUAL | DUAL | DUAL | QUAD |
Maker | VLSI | - | - | - | VLSI | VLSI | VLSI | VLSI |