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934055163127

Description
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, SOT-186A, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size566KB,13 Pages
ManufacturerWeEn Semiconductors
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934055163127 Overview

Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, SOT-186A, 3 PIN

934055163127 Parametric

Parameter NameAttribute value
MakerWeEn Semiconductors
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage500 V
ConfigurationSINGLE
Minimum DC current gain (hFE)14
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

934055163127 Related Products

934055163127
Description Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, SOT-186A, 3 PIN
Maker WeEn Semiconductors
package instruction FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow
Shell connection ISOLATED
Maximum collector current (IC) 5 A
Collector-emitter maximum voltage 500 V
Configuration SINGLE
Minimum DC current gain (hFE) 14
JESD-30 code R-PSFM-T3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type NPN
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
transistor applications SWITCHING
Transistor component materials SILICON

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