CDIP-22, Tube
Parameter Name | Attribute value |
Brand Name | Integrated Device Technology |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | IDT (Integrated Device Technology) |
Parts packaging code | CDIP |
package instruction | DIP, DIP22,.3 |
Contacts | 22 |
Manufacturer packaging code | CD22 |
Reach Compliance Code | _compli |
ECCN code | 3A001 |
Maximum access time | 35 ns |
I/O type | SEPARATE |
JESD-30 code | R-CDIP-T22 |
JESD-609 code | e0 |
memory density | 65536 bi |
Memory IC Type | STANDARD SRAM |
memory width | 1 |
Humidity sensitivity level | 1 |
Number of functions | 1 |
Number of terminals | 22 |
word count | 65536 words |
character code | 64000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 64KX1 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP22,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 5 V |
Certification status | Not Qualified |
Filter level | MIL-STD-883 Class B |
Maximum standby current | 0.02 A |
Minimum standby current | 4.5 V |
Maximum slew rate | 0.12 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |