AP21410 / AP21510
0.2A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH
Description
The AP21410 and AP21510 are integrated high-side power switches
optimized for Universal Serial Bus (USB) and other hot-swap
applications. The family of devices complies with USB 2.0 and is
available with both polarities of Enable input. They offer current and
thermal limiting and short circuit protection as well as controlled rise
time and undervoltage lockout functionality.
All devices are available in U-DFN2018-6 packages.
Pin Assignments
(Top View)
GND
IN
EN
1
6
OUT
OUT
NC
2
5
3
4
U-DFN2018-6
Features
Single USB Port Power Switches
Overcurrent and Thermal Protection
0.4A Typical Current Limiting
Reverse Current Blocking
95mΩ On-Resistance
Input Voltage Range: 2.7V to 5.5V
0.4ms Typical Rise Time
Very Low Shutdown Current: 1µA (Max)
ESD Protection: 4KV HBM, 400V MM
Active Low (AP21410) or Active High (AP21510) Enable
Ambient Temperature Range -40°C to +85°C
U-DFN2018-6: Available in “Green” Molding Compound (No Br,
Sb)
15kV ESD Protection per IEC 61000-4-2 (with External
Capacitance)
UL Recognized, File Number E322375
IEC60950-1 CB Scheme Certified
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Applications
Consumer Electronics – LCD TVs & Monitors, Game Machines
Communications – Set-Top Boxes, GPS, Smartphones
Computing – Laptops, Desktops, Servers, Printers, Docking
Stations, HUBs
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Typical Applications Circuit
Power Supply
2.7V to 5.5V
IN
0.1μF
OUT
Load
0.1μF
120μF
10μF
OFF
ON
AP21410
EN
GND
AP21410 / AP21510
Document number: DS37707 Rev. 2 - 2
1 of 14
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June 2015
© Diodes Incorporated
AP21410 / AP21510
Available Options
Part Number
AP21410
AP21510
Channel
1
1
Enable Pin (EN)
Active Low
Active High
Current Limit (Typical)
0.4A
0.4A
Recommended Maximum Continuous Load Current
0.2A
0.2A
Pin Descriptions
Pin Number
1
2
3
4
5, 6
Exposed
Pad
Pin Name
GND
IN
EN
NC
OUT
Exposed
Pad
Ground
Voltage Input Pin (all IN pins must be tied together externally).
Enable Input. Active Low (AP21410) and Active High (AP21510)
No internal connection
Voltage Output Pin (all OUT pins must be tied together externally).
Exposed Pad.
It should be externally connected to GND plane and thermal mass for enhanced thermal impedance.
It should not be used as electrical ground conduction path.
Function
Functional Block Diagram
AP21410, AP21510
IN
Current
Sense
OUT
UVLO
Driver
Current
Limit
EN
Thermal
Sense
GND
AP21410 / AP21510
Document number: DS37707 Rev. 2 - 2
2 of 14
www.diodes.com
June 2015
© Diodes Incorporated
AP21410 / AP21510
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Symbol
HBM
MM
ESD
IEC System
Level
V
IN
V
OUT
V
EN
I
LOAD
T
J(MAX)
T
ST
Caution:
Parameter
Human Body Model ESD Protection
Machine Model ESD Protection
Surges per EN61000-4-2. 1999 applied to
output terminals of EVM (Note 5)
Surges per EN61000-4-2. 1999 applied to
output terminals of EVM (Note 5)
Air
Contact
Ratings
4
400
15
8
6.5
V
IN
+0.3
6.5
Internal Limited
+150
-65 to +150
Units
kV
V
kV
kV
V
V
V
A
°C
°C
Input Voltage
Output Voltage
Enable Voltage
Maximum Continuous Load Current
Maximum Junction Temperature
Storage Temperature Range (Note 4)
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling
and transporting these devices.
4. UL Recognized Rating from -30°C to +70°C (Diodes qualified T
ST
from -65°C to +150°C).
5. External capacitors need to be connected to the output, EVM board was tested with capacitor 2.2μF 50V 0805.
This level is a pass test only and not a limit.
Notes:
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol
V
IN
I
OUT
T
A
V
IL
V
IH
Input Voltage
Output Current
Operating Ambient Temperature
EN Input Logic Low Voltage
EN Input Logic High Voltage
Parameter
Min
2.7
0
-40
0
2
Max
5.5
200
+85
0.8
V
IN
Units
V
mA
°C
V
V
AP21410 / AP21510
Document number: DS37707 Rev. 2 - 2
3 of 14
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June 2015
© Diodes Incorporated
AP21410 / AP21510
Electrical Characteristics
Symbol
V
UVLO
I
SHDN
I
Q
I
LEAK
I
REV
Input UVLO
Input Shutdown Current
Input Quiescent Current
Input Leakage Current
Reverse Leakage Current
Parameter
R
LOAD
= 1kΩ
Disabled, I
OUT
= 0
Enabled, I
OUT
= 0
Disabled, OUT Grounded
Disabled, V
IN
= 0V, V
OUT
= 5V, I
REV
at V
IN
V
IN
= 5V,
I
OUT
= 0.2A
R
DS(ON)
Switch On-Resistance
V
IN
= 3.3V,
I
OUT
= 0.2A
I
SHORT
T
SHORT
I
LIMIT
I
SINK
t
D(ON)
t
R
t
D(OFF)
t
F
T
SHDN
T
HYS
θ
JA
Note:
(@T
A
= +25°C, V
IN
= +5.0V, unless otherwise specified.)
Conditions
Min
1.6
—
—
—
—
—
—
—
—
—
—
300
—
—
—
—
—
—
—
—
Typ
1.9
0.5
45
—
0.01
80
—
100
—
250
2
400
—
0.05
0.4
0.14
0.04
+140
+25
70
Max
2.5
1
70
1
1
110
140
140
170
—
—
500
1
—
1.5
—
0.1
—
—
—
mA
µs
mA
µA
ms
ms
ms
ms
°C
°C
°C/W
mΩ
Unit
V
µA
µA
µA
µA
T
A
= +25°C
U-DFN2018-6
-40°C ≤ T
A
≤ +85°C
T
A
= +25°C
-40°C ≤ T
A
≤ +85°C
Short-Circuit Current Limit
Short-Circuit Response Time
Over-Load Current Limit
EN Input Leakage
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
Output Turn-Off Fall Time
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Thermal Resistance Junction-to-
Ambient
Enabled into Short Circuit
V
OUT
= 0V to I
OUT
= I
SHORT
(OUT shorted to ground)
Note: See Figure 2
V
IN
= 5V, V
OUT
= 4.5V, -40C ≤ T
A
≤ +85°C
V
EN
= 5V
R
LOAD
= 25Ω
R
LOAD
= 25Ω
R
LOAD
= 25Ω
R
LOAD
= 25Ω
Enabled, R
LOAD
= 1kΩ
—
U-DFN2018-6 (Note 6)
6. Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom
layer 1.0” x 1.4” ground plane.
AP21410 / AP21510
Document number: DS37707 Rev. 2 - 2
4 of 14
www.diodes.com
June 2015
© Diodes Incorporated
AP21410 / AP21510
Performance Characteristics
V
EN
V
EN
t
D(OFF)
t
F
90%
10%
90%
50%
50%
50%
50%
t
R
t
D(ON)
V
OUT
t
R
t
D(ON)
V
OUT
10%
90%
t
D(OFF)
t
F
90%
10%
10%
Figure 1. Voltage Waveforms: AP21410 (Left), AP21510 (Right)
Figure 2. Response Time to Short Circuit Waveform
Turn-On Delay and Rise time
V
EN
5V/div
Turn-Off Delay and Fall time
V
EN
5V/div
T
A
= +25°C
R
L
=25Ω
C
L
= 1µF
V
OUT
2V/div
T
A
= +25°C
R
L
=25Ω
C
L
= 1µF
500µs/div
V
OUT
2V/div
100µs/div
Turn-On Delay and Rise Time
V
EN
5V/div
Turn-Off Delay and Fall Time
V
EN
5V/div
T
A
= +25°C
R
L
=25Ω
C
L
= 100µF
V
OUT
2V/div
T
A
= +25°C
R
L
=25Ω
C
L
= 100µF
500µs/div
V
OUT
2V/div
2ms/div
AP21410 / AP21510
Document number: DS37707 Rev. 2 - 2
5 of 14
www.diodes.com
June 2015
© Diodes Incorporated