UNISONIC TECHNOLOGIES CO., LTD
2SB1202
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
1
TO-252
PNP PLANAR TRANSISTOR
1
SOT-89
1
TO-251
The UTC
2SB1202
applies to voltage regulators, relay drivers,
lamp drivers, and electrical equipment.
FEATURES
* Adoption of FBET, MBIT processes
* Large current capacity and wide ASO
* Low collector-to-emitter saturation voltage
* Fast switching speed
1
TO-92
1
TO-126C
ORDERING INFORMATION
Order Number
Halogen Free
2SB1202G-x-AB3-R
2SB1202G-x-TM3-T
2SB1202G-x-TN3-R
2SB1202G-x-T6C-K
2SB1202G-x-T92-B
2SB1202G-x-T92-K
C: Collector E: Emitter
(1)Packing Type
(2)Package Type
(3)Rank
(4)Green Package
Lead Free
2SB1202L-x-AB3-R
2SB1202L-x-TM3-T
2SB1202L-x-TN3-R
2SB1202L-x-T6C-K
2SB1202L-x-T92-B
2SB1202L-x-T92-K
Note: Pin Assignment: B: Base
2SB1202G-x-AB3-R
Package
SOT-89
TO-251
TO-252
TO-126C
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B
E
C
B
Packing
Tape Reel
Tube
Tape Reel
Bulk
Tape Box
Bulk
(1) K: Bulk, T: Tube, R: Tape Reel
(2) AB3: SOT-89, , TM3: TO-251, TN3: TO-252
T6C: TO-126C, T92: TO-92
(3) x: refer to Classification of h
FE1
(4) G: Halogen Free and Lead Free, L: Lead Free
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Copyright © 2019 Unisonic Technologies Co., Ltd
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QW-R217-005.G
2SB1202
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
V
CBO
V
CEO
V
EBO
PNP PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25C, unless otherwise specified )
RATINGS
UNIT
-60
V
-50
V
-6
V
SOT-89
3.5
W
TO-251
28
W
Collector Power Dissipation
T
C
=25C
TO-252
P
D
28
W
TO-126C
20
W
TO-92
1.5
W
DC
I
C
-3
A
Collector Current
PULSE
I
CP
-6
A
Junction Temperature
T
J
+150
C
Storage Temperature
T
STG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SOT-89
TO-251
TO-252
TO-126C
TO-92
SYMBOL
RATINGS
35.7
4.53
4.53
6.25
83.3
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Case
θ
JC
ELECTRICAL CHARACTERISTICS
(T
A
=25C, unless otherwise specified)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE1
h
FE2
f
T
Cob
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
=-10A, I
E
=0
I
C
=-1mA, R
BE
=
I
E
=-10A, I
C
=0
V
CB
=-40V,I
E
=0
V
EB
=-4V,I
C
=0
I
C
=-2A, I
B
=-100mA
I
C
=-2A, I
B
=-100mA
V
CE
=-2V, Ic=-100mA
V
CE
=-2V, Ic=-3A
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, f=1MHz
See test circuit
See test circuit
See test circuit
MIN
-60
-50
-6
TYP
MAX
UNIT
V
V
V
A
A
V
V
PARAMETER
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
-0.35
-0.94
100
35
150
39
70
450
35
-1
-1
-0.7
-1.2
560
MHz
pF
ns
ns
ns
CLASSIFICATION OF h
FE1
RANK
RANGE
R
100-200
S
140-280
T
200-400
U
280-560
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R217-005.G
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