2SC512 datasheet, PDF - EEWORLD Datasheet

2SC512: DescriptionTRANSISTOR,BJT,NPN,60V V(BR)CEO,1.5A I(C),TO-39; CategoryDiscrete semiconductor The transistor; File Size125KB，3 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TRANSISTOR,BJT,NPN,60V V(BR)CEO,1.5A I(C),TO-39

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	1.5 A
Configuration	Single
Minimum DC current gain (hFE)	30
JESD-609 code	e0
Maximum operating temperature	175 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.8 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	60 MHz

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