XC6602
Series
1A, 0.5V Low Input Voltage, High Speed LDO Regulator
ETR03045-006
■GENERAL
DESCRIPTION
The XC6602 series is a low voltage input (0.5V) operation and provides high accuracy
±15mV/±20mV
and can supply large
current efficiently due to its ultra low on-resistance even at low output voltages.
The series is ideally suited to the applications which require high current in low input/output voltages and consists of a Nch
driver transistor, a voltage reference, an error amplifier, a current limiter, a fold-back circuit, a thermal shutdown (TSD) circuit, an
under voltage lock out (UVLO) circuit, a soft-start circuit and a phase compensation circuit.
Output voltage is selectable in 0.1V increments within a range of 0.5V to 1.8V using laser trimming technology and ceramic
capacitors can be used for the output stabilization capacitor (C
L
). The inrush current (I
RUSH
) from V
IN
to V
OUT
for charging C
L
at
start-up can be reduced and makes the V
IN
stable. The soft-start time is optimized internally.
The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced
power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor (C
L
)
to be discharged via the internal switch. As a result the V
OUT
pin quickly returns to the V
SS
level.
The CE pull-down function keeps the IC to be in stand-by mode even if the CE pin is left open.
■APPLICATIONS
●
●
●
●
●
Smart phones / Mobile phones
Digital still cameras / Camcorders
Note PC / Tablet PC
E-book Readers / Electronic dictionaries
Wireless LAN
■FEATURES
Maximum Output Current
ON Resistance
Bias Voltage Range
Input Voltage Range
Output Voltage Range
Output Voltage Accuracy
Ripple Rejection
Low Power Consumption
Stand-by Current
Under-voltage Lockout
Thermal Shutdown
Protection Circuit
Function
:
:
:
:
:
:
:
:
:
:
:
:
:
1A (1.3A Limit)
0.15Ω＠V
BIAS
=3.6V,V
OUT
=1.2V
2.5V½6.0V
0.5V½3.0V
0.5V½1.8V (0.1V increments)
±0.015V＠V
OUT
＜1.2V
±0.020＠V
OUT
≧1.2V
60dB＠f=1kHz (V
BIAS_PSRR
)
75dB＠f=1kHz(V
IN_PSRR
)
100μA (V
BIAS
), 6.5μA(V
IN
)＠V
OUT
=1.2V
0.01μA (V
BIAS
), 0.01μA (V
IN
)
1.8V (V
BIAS
), 0.4V (V
IN
)
150℃＠detect, 125℃＠release
Fold-back Current Limit, TSD, UVLO
Built-in Soft-start
CE Pull-Down (Active High)
C
L
Auto Discharge
Operating Ambient Temperature
Output Capacitor
Packages
Environmentally Friendly
:
:
:
:
-40℃½+85℃
Ceramic Capacitor Compatible (2.2μF)
USP-6C, SOT-26W, SOT-89-5,WLP-5-02
EU RoHS Compliant, Pb Free
■
TYPICAL APPLICATION CIRCUIT
■TYPICAL
PERFORMANCE
CHARACTERISTICS
●Dropout
Voltage vs. Output Current
XC6602x121MR-G
V
CE
=V
BIAS
, C
BIAS
=C
IN
=1.0μF, C
L
=2.2μF
Ta=25℃
250
Dropout Voltage: Vdif(mV)
200
150
100
50
0
0
200
400
600
800
1000
Output Current: I
OUT
(mA)
VBIAS=3.3V
VBIAS=3.6V
VBIAS=5.0V
1/31
XC6602
Series
■PIN
CONFIGURATION
V
BIAS
V
SS
V
IN
V
OUT
5
2
V
IN
4
V
OUT
1
CE 2
4 V
IN
5 V
SS
3 V
BIAS
CE 6
NC 5
V
OUT
4
USP-6C
(BOTTOM VIEW)
1 V
BIAS
2 V
SS
3 V
IN
CE
NC
V
OUT
1
CE
2
3
WLP-5-02
(BOTTOM VIEW)
V
SS
V
BIAS
SOT-89-5
(TOP VIEW)
*The dissipation pad for the USP-6C package should be solder-plated in recommended mount pattern and metal masking so as to enhance
mounting strength and heat release.
If the pad needs to be connected to other pins, it should be connected to the V
SS
(No. 2) pin.
■PIN
ASSIGNMENT
PIN NUMBER
USP-6C
1
2
3
4
5
6
SOT-26W
6
5
4
3
2
1
SOT-89-5
3
2
4
5
-
1
WLP-5-02
3
5
4
1
-
2
PIN NAME
V
BIAS
V
SS
V
IN
V
OUT
NC
CE
FUNCTIONS
Power Supply Input
Ground
Driver Transistor Input
Output
No Connection
ON/OFF Control
■FUNCTION
CHART
XC6602 Series, Type A/B
PIN NAME
CE
SIGNAL
L
H
OPEN
STATUS
Stand-by
Active
Stand-by
■PRODUCT
CLASSIFICATION
●Ordering
Information
XC6602①②③④⑤⑥-⑦
(
*1
)
DESIGNATOR
①
②③
④
⑤⑥-⑦
(
*1
)
With soft-start circuit built-in, can be selected from with or without functions
ITEM
Type
Output Voltage
Output Voltage Accuracy
Packages (Order Unit)
SYMBOL
A
B
05~18
1
ER-G
MR-G
PR-G
0R-G
Soft-start included
Soft-start excluded
e.g. 1.2V
→
②=1、③=2
±0.015V (V
OUT
＜1.2V)、±0.020V
(V
OUT
≧1.2V)
USP-6C (3,000/Reel)
SOT-26W (3,000/Reel)
SOT-89-5 (1,000/Reel)
WLP-5-02 (3,000/Reel)
DESCRIPTION
(*1)
The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant.
2/31
XC6602
Series
■BLOCK
DIAGRAMS
・Type
A
・Type
B
* Diodes inside the circuits are ESD protection diodes and parasitic diodes.
■ABSOLUTE
MAXIMUM RATINGS
PARAMETER
Bias Voltage
Input Voltage
Output Current
Output Voltage
CE Input Voltage
USP-6C
SOT-26W
SOT-89-5
WLP-5-02
Operating Ambient Temperature
Storage Temperature
SYMBOL
V
BIAS
V
IN
I
OUT
V
OUT
V
CE
RATINGS
V
SS
-0.3½V
SS
+6.5
V
SS
-0.3½V
SS
+6.5
(*1)
1.65
V
SS
-0.3½V
BIAS
+0.3≦V
SS
+6.5
V
SS
-0.3½V
IN
+0.3≦V
SS
+6.5
V
SS
-0.3½V
SS
+6.5
120
(*2)
1000 ( PCB mounted )
250
(*2)
600 ( PCB mounted )
500
(*2)
1300 ( PCB mounted )
(*2)
750 ( PCB mounted )
-40½+85
-55½+125
Ta=25℃
UNITS
V
V
A
V
V
V
Power Dissipation
Pd
mW
Topr
Tstg
℃
℃
(*1) I
OUT
≦Pd/（V
IN
-V
OUT
）
(*2) The power dissipation measured with the test board condition is listed as reference data.
Please refer to page 25½28 for details.
3/31
XC6602
Series
■ELECTRICAL
CHARACTERISTICS
PARAMETER
Bias Voltage
Input Voltage
Output Voltage
Maximum Output Current
（ ４）
Load Regulation
(WLP-5-02)
Load Regulation
(USP-6C,SOT-26W,SOT-89-5)
Dropout Voltage
(*9)
Supply Current 1
Supply Current 2
Stand-by Current 1
Stand-by Current 2
*
Ta=25℃
MIN
2.5
0.5
-0.015
-0.020
1.0
-
-
-
76
0.1
3.9
-
-
TYP
-
-
V
OUT(T)
-
13
37
E-1
100
-
-
0.01
0.01
(*8)
(*3)
SYMBOL
V
BIAS
V
IN
V
OUT(E)
(*2)
CONDITIONS
MAX
6.0
3.0
+0.015
+0.020
-
26
68
UNITS
V
V
V
A
mV
mV
mV
μA
μA
μA
μA
CIRCUIT
①
①
①
①
①
①
①
②
②
②
②
I
OUTMAX
ΔV
OUT
ΔV
OUT
Vdif
I
BIAS
I
IN
I
BIAS_STB
I
IN_STB
B
B
V
OUT(T)
＜1.2V
V
OUT(T)
≧1.2V
V
OUT(T)
≦1.2V,
V
BIAS
=V
CE
=2.5V
V
OUT(T)
＞1.2V,V
BIAS
=V
CE
=V
OUT(T)
+1.3V
I
OUT
=100mA
1mA≦I
OUT
≦1A
1mA≦I
OUT
≦1A
I
OUT
=1A
I
OUT
=0A
V
OUT(T)
＜1.2V
V
OUT(T)
≧1.2V
V
BIAS
=6.0V,V
IN
=3.0V,V
CE
=V
SS
V
BIAS
=6.0V,V
IN
=3.0V,V
CE
=V
SS
I
OUT
=0A
V
OUT(T)
≦1.2V,V
CE
=V
BIAS
2.5V≦V
BIAS
≦6.0V
V
OUT(T)
＞1.2V,V
CE
=V
BIAS
V
OUT(T)
+1.3V≦V
BIAS
≦6.0V
V
OUT(T)
+0.1V≦V
IN
≦3.0V
(*5)
143
8.7
14.2
0.10
0.15
Bias Line Regulation
ΔV
OUT
/
(ΔV
BIAS
・V
OUT
)
ΔV
OUT
/
(ΔV
IN
・V
OUT
)
V
BIAS_UVLOD
V
BIAS_UVLOR
V
IN_UVLOD
V
IN_UVLOR
ΔV
OUT
/
(ΔTopr・V
OUT
)
V
BIAS_PSRR
V
IN_PSRR
I
LIM
I
SHORT
T
TSD
T
TSR
T
TSD
- T
TSR
R
DCHG
V
CEH
V
CEL
I
CEH
I
CEL
t
SS
t
ON
-
0.01
0.10
%/V
①
Input Line Regulation
Bias UVLO Voltage
Bias UVLO Release Voltage
Input UVLO Voltage
Input UVLO Release Voltage
Output Voltage Temperature
Characteristics
Bias Ripple Rejection Ratio
Input Ripple Rejection Ratio
Limit Current
（ ）
Short Current
Thermal Shutdown
Detect Temperature
Thermal Shutdown
Release Temperature
Thermal Shutdown Hysteresis Width
C
L
Auto-Discharge Resistance
CE ”H” Level Voltage
CE ”L” Level Voltage
CE ”H” Level Current
CE ”L” Level Current
(*10)
Soft-Start Time (Type A)
(*10)
Output Rise Time (Type B)
*4
-
V
SS
2.5
V
SS
0.5
0.01
-
-
-
-
±30
60
75
1.3
90
150
125
25
190
-
-
6.0
-
430
-
-
-
-
-
0.10
1.28
6.0
0.23
3.0
-
-
-
-
-
-
-
-
255
6.00
0.41
10.6
0.1
600
110
70
85
155
215
%/V
V
V
V
V
ppm/℃
dB
dB
A
mA
℃
℃
℃
Ω
V
V
μA
μA
μs
μs
mA
mA
mA
mA
①
①
①
①
①
①
③
③
①
①
①
①
①
①
④
④
④
④
⑤
⑤
⑤
⑤
⑤
⑤
I
OUT
=100mA
-40℃≦Topr≦85℃
V
BIAS
=V
CE
=3.6V
DC
+0.2V
p-pAC
I
OUT
=100mA,f=1kHz,C
BIAS
=OPEN
V
IN
=V
OUT(T)
+0.3V
DC
+0.2V
p-pAC
I
OUT
=100mA,f=1kHz,C
IN
=OPEN
V
OUT
=V
OUT(E)
×0.95
V
OUT
=V
SS
Junction Temperature
Junction Temperature
Junction Temperature
V
CE
=V
SS
,V
OUT
=V
OUT(T)
-
-
-
1.0
-
-
-
-
130
0.65
V
SS
3.2
-0.1
225
-
-
-
-
-
Inrush Current (Type A)
I
RUSH
V
BIAS
=V
CE
=6.0V
V
BIAS
=6.0V,V
CE
=V
SS
V
CE
=0V→3.6V,tr=5μs
V
CE
=0V→3.6V,tr=5μs
V
OUT
（
T
）
≦1.2V
C
L
=2.2μF
V
OUT
（
T
）
＞1.2V
V
OUT
（
T
）
≦1.2V
C
L
=10μF
V
OUT
（
T
）
＞1.2V
* 1: Unless otherwise stated, V
BIAS
=V
CE
=3.6V, V
IN
=V
OUT(T)
+0.3V, I
OUT
=1mA, C
BIAS
=C
IN
=1.0μF, C
L
=2.2μF
* 2: V
OUT(E)
= Effective output voltage
* 3: V
OUT(T)
= Nominal output voltage
* 4: Mount conditions affect heat dissipation. Maximum output current is not guaranteed when TSD starts to operate earlier.
(*6)
(*7)
* 5: Vdif = {V
IN1
-V
OUT1
}.
* 6: V
IN1
is an input voltage when V
OUT1
appears at the output during decreasing input voltage gradually.
* 7: V
OUT1
is a voltage equal to 98% of the output voltage where V
BIAS
=V
CE
=3.6 and V
IN
=V
OUT(T)
+0.3V at I
OUT
=1A is input to the V
IN
pin.
* 8: Please refer to the table E-1 named DROPOUT VOLTAGE CHART
* 9: Supply current 1 may be fluctuated because that some bias current flows into the output.
* 10: A time between the CE input goes over the CE H threshold and the output reaches V
OUT(E)
x0.9V.
4/31
XC6602
Series
■ELECTRICAL
CHARACTERISTICS (Continued)
●OUTPUT
VOLTAGE CHART (WLP-5-02)
E-1
NOMINAL
OUTPUT
VOLTAGE
V
GS
V
OUT(T)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
(V)
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
V
BIAS
=3.0V
Vdif(mV)
TYP.
79
82
85
88
91
94
100
109
118
130
144
171
201
MAX.
134
139
144
149
154
159
169
184
199
219
244
289
339
V
GS
(V)
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
1.9
1.9
1.8
1.7
1.6
1.5
79
82
85
88
91
94
100
109
118
130
134
139
144
149
154
159
169
184
199
219
76
129
V
BIAS
=3.3V
Vdif(mV)
TYP.
MAX.
V
GS
(V)
3.1
3.0
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
79
82
85
88
91
94
100
134
139
144
149
154
159
169
76
129
DROPOUT VOLTAGE (mV)
V
BIAS
=3.6V
Vdif(mV)
TYP.
MAX.
V
GS
(V)
3.7
3.6
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
2.7
2.6
2.5
2.4
79
82
134
139
76
129
73
124
V
BIAS
=4.2V
Vdif(mV)
TYP.
MAX.
V
GS
(V)
4.5
4.4
4.3
4.2
4.1
4.0
3.9
3.8
3.7
3.6
3.5
3.4
3.3
3.2
76
129
73
124
72
122
V
BIAS
=5.0V
Vdif(mV)
TYP.
MAX.
* Dropout voltage is defined as the V
GS
(=V
BIAS
–V
OUT(E)
) of the driver transistor.
●OUTPUT
VOLTAGE CHART (USP-6C,SOT-26W,SOT-89-5)
E-1
NOMINAL
OUTPUT
VOLTAGE
V
GS
V
OUT(T)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
(V)
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
V
BIAS
=3.0V
Vdif (mV)
TYP.
152
155
158
162
165
167
169
179
189
202
213
225
255
MAX.
218
223
228
233
238
243
253
268
283
303
328
373
423
V
GS
(V)
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
152
155
158
162
165
167
169
179
189
202
218
223
228
233
238
243
253
268
283
303
146
213
V
BIAS
=3.3V
Vdif (mV)
TYP.
MAX.
V
GS
(V)
3.1
3.0
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
152
155
158
162
165
167
169
218
223
228
233
238
243
253
146
213
DROPOUT VOLTAGE (mV)
V
BIAS
=3.6V
Vdif (mV)
TYP.
MAX.
V
GS
(V)
3.7
3.6
3.5
3.4
3.3
3.2
3.1
3.0
2.9
2.8
2.7
2.6
2.5
2.4
152
155
218
223
146
213
140
208
V
BIAS
=4.2V
Vdif (mV)
TYP.
MAX.
V
GS
(V)
4.5
4.4
4.3
4.2
4.1
4.0
3.9
3.8
3.7
3.6
3.5
3.4
3.3
3.2
146
213
140
208
137
206
V
BIAS
=5.0V
Vdif (mV)
TYP.
MAX.
* Dropout voltage is defined as the V
GS
(=V
BIAS
–V
OUT(E)
) of the driver transistor.
5/31
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