1MBH65-090 datasheet, PDF - EEWORLD Datasheet

1MBH65-090: Description200 A, 600 V, N-CHANNEL IGBT; Categorysemiconductor Discrete semiconductor; File Size197KB，1 Pages; ManufacturerETC1

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1MBH65-090 Overview

200 A, 600 V, N-CHANNEL IGBT

Parameter Name	Attribute value
Number of terminals	7
Maximum collector current	200 A
Maximum Collector-Emitter Voltage	600 V
Processing package description	M219, 7 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	UNSPECIFIED
Terminal location	UPPER
Packaging Materials	UNSPECIFIED
structure	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODES
Number of components	2
transistor applications	POWER control
Transistor component materials	silicon
Channel type	N channel
Transistor type	INSULATED GATE BIPOLAR

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