K6X4008T1F Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
0.1
Initial Draft
Revised
- Added 55ns product( Vcc = 3.0V~3.6V)
Revised
- Added Commercial product
Revised
- Errata correction : corrected commercial product family name from
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.
Finalized
- Changed I
CC
from 4mA to 2mA
- Changed I
CC
1 from 4mA to 3mA
- Changed I
CC
2 from 30mA to 25mA
- Changed I
SB
1
(Commercial)
from 15µA to 10µA
- Changed I
SB
1
(industrial)
from 20µA to 10µA
- Changed I
SB
1
(Automotive)
from 30µA to 20µA
- Changed I
DR
(Commercial)
from 15µA to 10µA
- Changed I
DR
(industrial)
from 20µA to 10µA
- Changed I
DR
(Automotive)
from 30µA to 20µA
Revised
- Added lead free product
- Changed I
SB
1
(Automotive)
from 20µA to 30µA
- Changed I
DR
(Automotive)
from 20µA to 30µA
Draft Data
July 29, 2002
October 14, 2002
Remark
Preliminary
Preliminary
0.2
December 2, 2002
Preliminary
0.21
March 26, 2003
Preliminary
1.0
September 16, 2003
Final
2.0
March 7, 2005
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
March 2005
K6X4008T1F Family
512K×8 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
•
Process Technology: Full CMOS
•
Organization: 512K×8
•
Power Supply Voltage: 2.7~3.6V
•
Low Data Retention Voltage: 2V(Min)
•
Three State Outputs
•
Package Type: 32-SOP-525, 32-TSOP2-400F/R
32-TSOP1-0813.4F
CMOS SRAM
GENERAL DESCRIPTION
The K6X4008T1F families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
various operating temperature range and have various package
types for user flexibility of system design. The families also sup-
port low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature
K6X4008T1F-B
K6X4008T1F-F
K6X4008T1F-Q
Commercial(0~70°C)
Industrial(-40~85°C)
Automotive(-40~125°C)
55
1)
/70
2)
/85ns
2.7~3.6V
70
2)
/85ns
Vcc
Range
Power Dissipation
Speed
Standby Operating
(I
SB1
, Max) (I
CC2
, Max)
10µA
10µA
30µA
25mA
32-SOP-525, 32-TSOP1-0813.4F
32-TSOP2-400F
PKG Type
32-SOP-525, 32-TSOP1-0813.4F
32-TSOP2-400F/R
1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load.
2. This parameter is measured with 30pF test load.
PIN DESCRIPTION
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
32-SOP
32-TSOP2
(Forward)
32-TSOP2
(Reverse)
7
8
9
10
11
12
13
14
15
16
Row
Addresses
Row
select
Memory array
I/O
1
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
I/O
8
Data
cont
I/O Circuit
Column select
Data
cont
Column Addresses
32-
S
TSOP1
(Forward)
CS
WE
Control
logic
Name
Function
Name
Vcc
Vss
Function
Power
Ground
OE
A
0
~A
18
Address Inputs
WE
CS
OE
Write Enable Input
Chip Select Input
Output Enable Input
I/O
1
~I/O
8
Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 2.0
March 2005
K6X4008T1F Family
PRODUCT LIST
Commercial Products(0~70°C)
Part Name
K6X4008T1F-GB55
1)
K6X4008T1F-GB70
K6X4008T1F-GB85
K6X4008T1F-BB55
1)
K6X4008T1F-BB70
K6X4008T1F-BB85
K6X4008T1F-YB55
1)
K6X4008T1F-YB70
K6X4008T1F-YB85
K6X4008T1F-LB55
1)
K6X4008T1F-LB70
K6X4008T1F-LB85
K6X4008T1F-VB55
1)
K6X4008T1F-VB70
K6X4008T1F-VB85
K6X4008T1F-UB55
1)
K6X4008T1F-UB70
K6X4008T1F-UB85
K6X4008T1F-MB55
1)
K6X4008T1F-MB70
K6X4008T1F-MB85
K6X4008T1F-QB55
1)
K6X4008T1F-QB70
K6X4008T1F-QB85
CMOS SRAM
Industrial Products(-40~85°C)
Part Name
K6X4008T1F-GF55
1)
K6X4008T1F-GF70
K6X4008T1F-GF85
K6X4008T1F-BF55
1)
K6X4008T1F-BF70
K6X4008T1F-BF85
K6X4008T1F-YF55
1)
K6X4008T1F-YF70
K6X4008T1F-YF85
K6X4008T1F-LF55
1)
K6X4008T1F-LF70
K6X4008T1F-LF85
K6X4008T1F-VF55
1)
K6X4008T1F-VF70
K6X4008T1F-VF85
K6X4008T1F-UF55
1)
K6X4008T1F-UF70
K6X4008T1F-UF85
K6X4008T1F-MF55
1)
K6X4008T1F-MF70
K6X4008T1F-MF85
K6X4008T1F-QF55
1)
K6X4008T1F-QF70
K6X4008T1F-QF85
Automotive Products(-40~125°C)
Part Name
K6X4008T1F-GQ70
K6X4008T1F-GQ85
K6X4008T1F-BQ70
K6X4008T1F-BQ85
K6X4008T1F-YQ70
K6X4008T1F-YQ85
K6X4008T1F-LQ70
K6X4008T1F-LQ85
K6X4008T1F-VQ70
K6X4008T1F-VQ85
K6X4008T1F-UQ70
K6X4008T1F-UQ85
Function
32-SOP, 55ns
32-SOP, 70ns
32-SOP, 85ns
32-SOP, 55ns, L/F
2)
32-SOP, 70ns, L/F
32-SOP, 85ns, L/F
32-sTSOP1-F, 55ns
32-sTSOP1-F, 70ns
32-sTSOP1-F, 85ns
32-sTSOP1-F, 55ns, L/F
32-sTSOP1-F, 70ns, L/F
32-sTSOP1-F, 85ns, L/F
32-TSOP2-F, 55ns
32-TSOP2-F, 70ns
32-TSOP2-F, 85ns
32-TSOP2-F, 55ns, L/F
32-TSOP2-F, 70ns, L/F
32-TSOP2-F, 85ns, L/F
32-TSOP2-R, 55ns
32-TSOP2-R, 70ns
32-TSOP2-R, 85ns
32-TSOP2-R, 55ns, L/F
32-TSOP2-R, 70ns, L/F
32-TSOP2-R, 85ns, L/F
Function
32-SOP, 55ns
32-SOP, 70ns
32-SOP, 85ns
32-SOP, 55ns, L/F
32-SOP, 70ns, L/F
32-SOP, 85ns, L/F
32-sTSOP1-F, 55ns
32-sTSOP1-F, 70ns
32-sTSOP1-F, 85ns
32-sTSOP1-F, 55ns, L/F
32-sTSOP1-F, 70ns, L/F
32-sTSOP1-F, 85ns, L/F
32-TSOP2-F, 55ns
32-TSOP2-F, 70ns
32-TSOP2-F, 85ns
32-TSOP2-F, 55ns, L/F
32-TSOP2-F, 70ns, L/F
32-TSOP2-F, 85ns, L/F
32-TSOP2-R, 55ns
32-TSOP2-R, 70ns
32-TSOP2-R, 85ns
32-TSOP2-R, 55ns, L/F
32-TSOP2-R, 70ns, L/F
32-TSOP2-R, 85ns, L/F
Function
32-SOP, 70ns
32-SOP, 85ns
32-SOP, 70ns, L/F
32-SOP, 85ns, L/F
32-sTSOP1-F, 70ns
32-sTSOP1-F, 85ns
32-sTSOP1-F, 70ns, L/F
32-sTSOP1-F, 85ns, L/F
32-TSOP2-F, 70ns
32-TSOP2-F, 85ns
32-TSOP2-F, 70ns, L/F
32-TSOP2-F, 85ns, L/F
1. Operating voltage range is 3.0V~3.6V
2. L/F : Lead Free Package
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
OE
X
1)
H
L
X
1)
WE
X
1)
H
H
L
I/O
High-Z
High-Z
Dout
Din
Mode
Deselected
Output Disabled
Read
Write
Power
Standby
Active
Active
Active
1. X means don′t care (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
Ratings
-0.2 to V
CC
+0.3(max. 3.9V)
-0.2 to 3.9
1.0
-65 to 150
0 to 70
Operating Temperature
T
A
-40 to 85
-40 to 125
Unit
V
V
W
°C
°C
°C
°C
Remark
-
-
-
-
K6F4008T1F-B
K6F4008T1F-F
K6F4008T1F-Q
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 2.0
March 2005
K6X4008T1F Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Min
2.7
0
2.2
-0.2
3)
Typ
3.0/3.3
0
-
-
CMOS SRAM
Max
3.6
0
Vcc+0.2
2)
0.6
Unit
V
V
V
V
Note:
1. Commercial Product: T
A
=0 to 70°C, otherwise specified
Industrial Product: T
A
=-40 to 85°C, otherwise specified
Automotive Product: T
A
=-40 to 125°C, otherwise specified
2. Overshoot: V
CC
+2.0V in case of pulse width
≤
30ns
3. Undershoot: -2.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
V
OL
V
OH
I
SB
V
IN
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
V
IO
=Vss to Vcc
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA CS≤0.2V,V
IN
≤0.2V
or V
IN
≥Vcc-0.2V
Test Conditions
Min
-1
-1
-
-
-
-
2.4
-
K6X4008T1F-B
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
1
1
2
3
25
0.4
-
0.3
10
10
30
Unit
µA
µA
mA
mA
mA
V
V
mA
µA
µA
µA
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
I
OL
=2.1mA
I
OH
=-1.0mA
CS=V
IH
, Other inputs = V
IL
or V
IH
Standby Current (CMOS)
I
SB1
CS≥Vcc-0.2V, Other inputs=0~Vcc
K6X4008T1F-F
K6X4008T1F-Q
4
Revision 2.0
March 2005
K6X4008T1F Family
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load(see right): C
L
=100pF+1TTL
C
L
1)
=30pF+1TTL
1. 55ns, 70ns product
CMOS SRAM
C
L
1)
1. Including scope and jig capacitance
AC CHARACTERISTICS
(V
CC
=2.7~3.6V, Commercial product: T
A
=0 to 70°C, Industrial product: T
A
=-40 to 85°C, Automotive product: T
A
=-40 to 125°C)
Speed Bins
Parameter List
Symbol
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Read
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
55
-
-
-
10
5
0
0
10
55
45
0
45
40
0
0
25
0
5
55ns
1)
Max
-
55
55
25
-
-
20
20
-
-
-
-
-
-
-
20
-
-
-
Min
70
-
-
-
10
5
0
0
10
70
60
0
60
55
0
0
30
0
5
70ns
Max
-
70
70
35
-
-
25
25
-
-
-
-
-
-
-
25
-
-
-
Min
85
-
-
-
10
5
0
0
10
85
70
0
70
55
0
0
35
0
5
85ns
Max
-
85
85
40
-
-
25
25
-
-
-
-
-
-
-
25
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
1. Voltage range is 3.0V~3.6V for commercial and industrial product.
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Symbol
V
DR
CS≥Vcc-0.2V
K6X4008T1F-B
Data retention current
I
DR
Vcc=3.0V, CS≥Vcc-0.2V
K6X4008T1F-F
K6X4008T1F-Q
Data retention set-up time
Recovery time
t
SDR
t
RDR
See data retention waveform
Test Condition
Min
2.0
-
-
-
0
5
-
-
0.5
Typ
1)
-
Max
3.6
10
10
30
-
-
Unit
V
µA
µA
µA
ms
1. Typical values are measured at T
A
= 25°C and not 100% tested.
5
Revision 2.0
March 2005
京公网安备 11010802033920号
EEWORLD
