K4B1G1646E-HIH90 datasheet, PDF

K4B1G1646E-HIH90: DescriptionDDR DRAM, 64MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96; Categorystorage storage; File Size952KB，55 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4B1G1646E-HIH90 Overview

DDR DRAM, 64MX16, 0.255ns, CMOS, PBGA96, HALOGEN FREE AND ROHS COMPLIANT, FBGA-96

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	96
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.255 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B96
length	13.3 mm
memory density	1073741824 bi
Memory IC Type	DDR DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	96
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	95 °C
Minimum operating temperature	-40 °C
organize	64MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.575 V
Minimum supply voltage (Vsup)	1.425 V
Nominal supply voltage (Vsup)	1.5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	7.5 mm

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