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FDD8878

Description
35A, 30V, 0.0185ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size1MB,13 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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FDD8878 Overview

35A, 30V, 0.0185ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3

FDD8878 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-252AA
package instructionDPAK-3
Contacts3
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)25 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)35 A
Maximum drain-source on-resistance0.0185 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON

FDD8878 Related Products

FDD8878 FDU8878
Description 35A, 30V, 0.0185ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 35A, 30V, 0.0185ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3
Is it lead-free? Lead free Lead free
Maker Rochester Electronics Rochester Electronics
Parts packaging code TO-252AA TO-251AA
package instruction DPAK-3 IPAK-3
Contacts 3 3
Reach Compliance Code unknow unknow
Avalanche Energy Efficiency Rating (Eas) 25 mJ 25 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (ID) 35 A 35 A
Maximum drain-source on-resistance 0.0185 Ω 0.0185 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-251AA
JESD-30 code R-PSSO-G2 R-PSIP-T3
Humidity sensitivity level 1 NOT SPECIFIED
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status COMMERCIAL COMMERCIAL
surface mount YES NO
Terminal surface MATTE TIN NOT SPECIFIED
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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