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NRVBS360BT3GVF01

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 60V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size238KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NRVBS360BT3GVF01 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 4A, 60V V(RRM), Silicon

NRVBS360BT3GVF01 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionR-PDSO-J2
Reach Compliance Code_compli
Other featuresFREE WHEELING DIODE
applicationPOWER
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.63 V
JESD-30 codeR-PDSO-J2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage60 V
Maximum reverse current30 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formJ BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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