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MDA920A2

Description
Diode Switching 1.2KV 1.129KA 3-Pin
CategoryDiscrete semiconductor    diode   
File Size61KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
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MDA920A2 Overview

Diode Switching 1.2KV 1.129KA 3-Pin

MDA920A2 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknow
<cyv
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MDA920A1
thru
MDA920A9
si Sheet
MINIATURE INTEGRAL DIODE ASSEMBLIES
. . . passivated, diffused-silicon dice interconnected and transfer
molded into void less hybrid rectifier circuit assemblies.
Large Inrush Surge Capability — 45 A (For
1.0 Cycle)
SINGLE-PHASE
FULL-WAVE BRIDGE
1.5 AMPERES
25-1000 VOLTS
Efficient Thermal Management Provides Maximum Power Handling
in Minimum Space
Designers Data for "Worst Caw"
Conditions
The Designers Datasheet permits the design of most circuits entirely from
the information presented. Limit curves - representing boundaries on device
characteristics - are given to facilitate "worst case" design.
MAXIMUM RATINGS
Rating (Par Lag)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
DC Output Voltage
Resistive Load
Capaciuttve Load
Sine Wave RMS Input Voltage
Average Rectified Forward
Current
(single phase bridge
resistive load, 60 Hz,
see Figure 6. T
A
- SO°C
Non-Repetitive Peak Surge
Current, (see Figure 21
rated load.Tj = 175°C
Operating and Storage Junction
Temperature Range
Characteristic
Maximum Instantaneous Forward Voltage Drop
(Per Legl lip - 2-4 Amp, Tj - 25°CI Figure 1
Maximum Revere* Current (Rated dc Voltage
across ac terminals, Tj « 25°CJ
THERMAL CHARACTERISTICS
Character istic
Effective Bridge Thermal Resistance,
Junction to Ambient (Full-Wave Bridge Operation,
Typical Printed Circuit Board Mounting)
Symbol
50
Symbol
VRRM
V
RWM
A1 A2
A3 A4 AS A6 A7 AS
A9
Unit
Volts
25 50
1OO 200 300 400 600 800
1000
VR
Vdc
Vdc
V
R(RMS)
15 30 62 124 185 250 380 500 620
Volts
25 SO 100 200 300 400 600 800
1000
Volts
18 35
70 140 210 280 420 560 700
Volts
'0
Amp
'FSM
Tj. T
ltg
-•
45 for 1 cycl<
510*175
Am[
r
NOTES:
1.LEAD DIM "0"TQ
BE
MEASURED WITHIN
"I"
I.
LEADS FORMED TO f IT INTO
HOLE 0.94 mm BH37IMIN.
°C
ELECTRICAL CHARACTERISTICS
Symbol
V
F
Max
1.2
20
Unit
Volts
CA
|R
INCHES
Unit
°C/W
woo
1.T40
MECHANICAL CHARACTERISTICS
CASE: Transfer-molded plastic encapsulation.
POLARITY: Terminal-designation embossed
on case
+DC output
-DC output
•vAC input
MOUNTING POSITION: Any
WEIGHT: t.Ogram (approx)
TERMINALS: Readily solderable
connections, corrosion resistant.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions with in
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time u. go'ing
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors

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Reach Compliance Code unknow unknown unknown unknown unknown unknown unknown unknown unknown
Maker New Jersey Semiconductor - New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor New Jersey Semiconductor

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