<J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA1069
DESCRIPTION
• Low Collector Saturation Voltage
• Fast Switching Speed
PIN 1.BASE
APPLICATIONS
• Designed for high-speed switching, and is ideal for use
as a driver in devices such as switching reglators,DC/DC
converters, and high frequency power amplifiers.
<
r^
1.
COLLECTOR
3. BETTER
TO-220C package
B .
i
r
V ~ | ~f
*
*S
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
*
Mo
VALUE
UNIT
A
U 1
=k
?J
-•-
VCBO
Collector-Base Voltage
-80
V
I
*
K
T
L
H
"1
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-12
V
1
C
i
•M
« K
li-
D
••*
H"
•h j
R|*
Ic
Collector Current-Continuous
-5
A
mm
I CM
Collector Current-Peak
-10
A
IB
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25"C
-2.5
A
DIN
A
B
r
D
F
G
1.5
W
PC
Total Power Dissipation
@ T
C
=25°C
Tj
30
H
J
K
L
0
R
S
MEN
15.50
9.90
4.20
0.70
3.40
4.98
2.68
0.44
13.00
1.20
MAX
15.90
10.20
4.50
0.90
3.70
5.18
2.90
0.60
13.40
1,45
2.90
2.70
1.35
l>.65
8.86
Junction Temperature
150
'C
Tstg
Storage Temperature Range
-55-150
"C
U
V
2.70
3.30
1.29
6.45
8.66
M Seim-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-ConUuctors is believed to he both accurate and reliable at the time or going
10 press. I louever. NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use "
NJ Seim-Conductors encourages customers to verify that datasheets are current before placina orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
VCEO(SUS)
VcEX(SUS)-1
2SA1069
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
l
c
= -3.0A ; I
B
= -0.3A, L=1mH
lc=-3.0A;l
B
i=-l
B
2=-0.3A,
V
B
e(OFF)=5.0V, L=180u H.clamped
l
c
= -6.0A ; I
B
1= -0.6A; I
B
2= -0.3A,
VBE(OFF)= 5.0V, L= 180u H.clamped
lc= -3.0A; I
B
= -0.3A
lc= -3.0A; I
B
= -0.3A
V
CB
= -60V; I
E
= 0
VCE= -60V; R
BE
= 51 n , T
a
=125"C
V
CE
= -60V; V
BE(
off)= -1.5V
V
CE
= -60V; V
BE(
offr -1.5V, T
a
=125f
V
EB
= -5V; l
c
=0
lc= -0.3A; VCE= -5V
lc= -3.0A; V
CE
= -5V
MIN
-60
-60
-60
MAX
UNIT
V
V
V
VcEX(SUS)-2
VcE(sat)
-0.6
-1.5
-10
-1.0
-10
-1.0
-10
40
40
200
V
V
MA
mA
uA
mA
MA
V
B
E(sat)
ICBO
ICER
ICEX
IEBO
hpE-1
hFE-2
Switching times
ton
Turn-on Time
Storage Time
Fall Time
lc=-3.0A,R
L
=17n,
I
S
1= -I
B
2= -O.SA.Vcc^-SOV
0.5
2.5
0.5
u s
M s
u s
tstg
tf
•
h
FE
.
2
Classifications
M
L
K
40-80
60-120
100-200
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