TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3, FET General Purpose Small Signal
Parameter Name | Attribute value |
Maker | National Semiconductor(TI ) |
package instruction | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknow |
Configuration | SINGLE |
Maximum drain-source on-resistance | 60 Ω |
FET technology | JUNCTION |
Maximum feedback capacitance (Crss) | 3.5 pF |
JESD-30 code | O-PBCY-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Package body material | PLASTIC/EPOXY |
Package shape | ROUND |
Package form | CYLINDRICAL |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | BOTTOM |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
PN4392-18 | 2N4944 | EN930 | E210 | E211 | PN4303-18 | PN4393-18 | PN4391-18 | EN918 | |
---|---|---|---|---|---|---|---|---|---|
Description | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3, FET General Purpose Small Signal | TRANSISTOR,BJT,NPN,40V V(BR)CEO,500MA I(C),TO-106 | TRANSISTOR,BJT,NPN,45V V(BR)CEO,30MA I(C),TO-106 | TRANSISTOR,JFET,N-CHANNEL,15MA I(DSS),TO-106VAR | TRANSISTOR,JFET,N-CHANNEL,20MA I(DSS),TO-106VAR | TRANSISTOR,JFET,N-CHANNEL,10MA I(DSS),TO-92 | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3, FET General Purpose Small Signal | TRANSISTOR,BJT,NPN,15V V(BR)CEO,50MA I(C),TO-106 |
Reach Compliance Code | unknow | compli | compliant | compliant | compliant | unknown | unknown | unknown | compliant |
Polarity/channel type | N-CHANNEL | NPN | NPN | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | NPN |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
Maker | National Semiconductor(TI ) | - | National Semiconductor(TI ) | - | - | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) |
Configuration | SINGLE | Single | Single | - | - | - | SINGLE | SINGLE | Single |
FET technology | JUNCTION | - | - | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | - |
Is it Rohs certified? | - | incompatible | incompatible | incompatible | incompatible | incompatible | - | - | incompatible |
JESD-609 code | - | e0 | e0 | e0 | e0 | e0 | - | - | e0 |
Maximum operating temperature | - | 150 °C | 125 °C | 125 °C | 125 °C | 150 °C | - | - | 125 °C |
Maximum power dissipation(Abs) | - | 0.22 W | 0.2 W | 0.35 W | 0.35 W | 0.36 W | - | - | 0.2 W |
Terminal surface | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | - | Tin/Lead (Sn/Pb) |