EEWORLDEEWORLDEEWORLD

Part Number

Search

WV3HG264M72EER665PD4SG

Description
DDR DRAM Module, 128MX72, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200
Categorystorage    storage   
File Size190KB,11 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
Download Datasheet Parametric View All

WV3HG264M72EER665PD4SG Overview

DDR DRAM Module, 128MX72, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200

WV3HG264M72EER665PD4SG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1820328719
Parts packaging codeSODIMM
package instructionDIMM,
Contacts200
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL0
access modeDUAL BANK PAGE BURST
Maximum access time0.45 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XZMA-N200
JESD-609 codee4
memory density9663676416 bit
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals200
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize128MX72
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelOTHER
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationZIG-ZAG
White Electronic Designs
WV3HG264M72EER-PD4
ADVANCED*
1GB – 2x64Mx72 DDR2 SDRAM REGISTERED, SO-DIMM, w/PLL
FEATURES
Registered 200-pin (SO-DIMM), Small-Outline dual
in-line memory module
Support ECC detection and correction
Fast data transfer rates: PC2-6400*, PC2-5300*,
PC2-4200 and PC2-3200
V
CC
= V
CCQ
= 1.8V ±0.1V
V
CCSPD
= 1.7V to 3.6V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Four-bit prefetch architecture
Multiple internal device banks for concurrent
operation
Differential clock inputs (CK, CK#)
Programmable CAS# latency (CL): 3, 4, 5*, and 6*
Posted CAS# additive latency: 0, 1, 2, 3 and 4
On-die termination (ODT)
7.8µs average periodic refresh interval
Serial Presence Detect (SPD) with EEPROM
Utilizes 512Mb DDR2 SDRAM components
Auto & self refresh (64ms: 8,192 cycle refresh)
Gold edge contacts
Dual Rank
RoHS compliant
JEDEC approved Pin-out
Package
• 200 Pin SO-DIMM: 30.00mm (1.181") TYP.
DESCRIPTION
The WV3HG264M72EER is a 2x64Mx72 Double Data
Rate DDR2 SDRAM high density module. This memory
module consists of eighteen 64Mx8 bit DDR2 Synchronous
DRAMs in FBGA packages, mounted on a 200-pin SO-
DIMM FR4 substrate.
* This product is under development, is not qualified or characterized and is subject to
change or cancellation without notice.
NOTE: Consult factory for availability of:
• Vendor source control options
• Industrial temperature option
OPERATING FREQUENCIES
PC2-3200
Clock Speed
CL-t
RCD
-t
RP
* Consult factory for availability
PC2-4200
266MHz
4-4-4
PC2-5300*
333MHz
5-5-5
PC2-6400*
400MHz
6-6-6
200MHz
3-3-3
November 2006
Rev. 4
1
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

Recommended Resources

Popular Articles

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号