Trans Voltage Suppressor Diode, 15000W, 16V V(RWM), Bidirectional, 1 Element, Silicon
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Microchip |
package instruction | R-PSSO-G1 |
Reach Compliance Code | compli |
Other features | HIGH RELIABILITY |
Maximum breakdown voltage | 19.7 V |
Minimum breakdown voltage | 17.8 V |
Breakdown voltage nominal value | 18.75 V |
Maximum clamping voltage | 26 V |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 code | R-PSSO-G1 |
JESD-609 code | e0 |
Maximum non-repetitive peak reverse power dissipation | 15000 W |
Number of components | 1 |
Number of terminals | 1 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
polarity | BIDIRECTIONAL |
Maximum power dissipation | 2.5 W |
Certification status | Not Qualified |
Guideline | MIL-19500 |
Maximum repetitive peak reverse voltage | 16 V |
surface mount | YES |
technology | AVALANCHE |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |