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1N5140ACHIP

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 10pF C(T), 60V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size116KB,2 Pages
ManufacturerMsi Electronics Inc
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1N5140ACHIP Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 10pF C(T), 60V, Silicon, Abrupt

1N5140ACHIP Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionX-XUUC-N
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage60 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.8
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeX-XUUC-N
Number of components1
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Certification statusNot Qualified
minimum quality factor300
Maximum repetitive peak reverse voltage60 V
Maximum reverse current2e-8 µA
Reverse test voltage55 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT

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