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1N4796

Description
Variable Capacitance Diode, 47pF C(T), Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size49KB,1 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

1N4796 Overview

Variable Capacitance Diode, 47pF C(T), Silicon, Abrupt

1N4796 Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio2.0325
Nominal diode capacitance47 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor15
Maximum repetitive peak reverse voltage20 V
Maximum reverse current5e-9 µA
Reverse test voltage20 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
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