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24C02AT-I/SN

Description
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOIC-8
Categorystorage    storage   
File Size77KB,12 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric View All

24C02AT-I/SN Overview

256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOIC-8

24C02AT-I/SN Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instruction0.150 INCH, PLASTIC, SOIC-8
Contacts8
Reach Compliance Codecompli
Other featuresDATA RETENTION > 40 YEARS
Maximum clock frequency (fCLK)0.1 MHz
Data retention time - minimum200
Durability1000000 Write/Erase Cycles
I2C control byte1010DDDR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length4.9 mm
memory density2048 bi
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256X8
Output characteristicsOPEN-DRAIN
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Serial bus typeI2C
Maximum standby current0.0001 A
Maximum slew rate0.00425 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width3.9 mm
Maximum write cycle time (tWC)1 ms
write protectHARDWARE
Base Number Matches1
24C01A/02A/04A
1K/2K/4K 5.0V I
2
C
Serial EEPROMs
FEATURES
Low power CMOS technology
Hardware write protect
Two wire serial interface bus, I
2
C
compatible
5.0V only operation
Self-timed write cycle (including auto-erase)
Page-write buffer
1ms write cycle time for single byte
1,000,000 Erase/Write cycles guaranteed
Data retention >200 years
8-pin DIP/SOIC packages
Available for extended temperature ranges
- Commercial (C):
0˚C to +70˚C
- Industrial (I):
-40˚C to +85˚C
- Automotive (E):
-40˚C to +125˚C
PACKAGE TYPES
DIP
A0
A1
A2
V
SS
8-lead
SOIC
1
2
3
4
24C01A
24C02A
24C04A
8
7
6
5
V
CC
WP*
SCL
SDA
A0
A1
A2
V
SS
1
2
3
4
24C01A
24C02A
24C04A
8
7
6
5
V
CC
WP*
SCL
SDA
DESCRIPTION
The Microchip Technology Inc. 24C01A/02A/04A is a
1K/2K/4K bit Electrically Erasable PROM. The device
is organized as shown, with a standard two wire serial
interface. Advanced CMOS technology allows a signif-
icant reduction in power over NMOS serial devices. A
special feature in the 24C02A and 24C04A provides
hardware write protection for the upper half of the block.
The 24C01A and 24C02A have a page write capability
of two bytes and the 24C04A has a page length of eight
bytes. Up to eight 24C01A or 24C02A devices and up
to four 24C04A devices may be connected to the same
two wire bus.
This device offers fast (1ms) byte write and
extended (-40
°
C to 125
°
C) temperature operation. It
is recommended that all other applications use
Microchip’s 24LCXXB.
24C01A
Organization
Write Protect
Page Write
Buffer
128 x 8
None
2 Bytes
24C02A
258 x 8
080-0FF
2 Bytes
24C04A
2 x 256 x 8
100-1FF
8 Bytes
14-lead
SOIC
NC
A0
A1
NC
A2
V
SS
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
NC
V
CC
WP
NC
SCL
SDA
NC
24C01A
24C02A
24C04A
* “TEST” pin in 24C01A
BLOCK DIAGRAM
Vcc
Vss
Data
Buffer
(FIFO)
Data Reg.
SDA
A
d
d
r
e
s
s
Vpp
R/W Amp
Slave Addr.
P
o
i
n A0 to
t
e A7
r
Increment
Memory
Array
SCL
Control
Logic
A8
A0 A1 A2 WP
I
2
C is a trademark of Philips Corporation.
©
1996 Microchip Technology Inc.
DS11183D-page 1
This document was created with FrameMaker 4 0 4

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