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V827464K24SAEW-A1

Description
DDR DRAM Module, 64MX72, 0.8ns, CMOS, LEAD FREE, DIMM-184
Categorystorage    storage   
File Size264KB,15 Pages
ManufacturerProMOS Technologies Inc
Environmental Compliance  
Download Datasheet Parametric View All

V827464K24SAEW-A1 Overview

DDR DRAM Module, 64MX72, 0.8ns, CMOS, LEAD FREE, DIMM-184

V827464K24SAEW-A1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerProMOS Technologies Inc
Parts packaging codeDIMM
package instructionDIMM, DIMM184
Contacts184
Reach Compliance Codecompli
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time0.8 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)125 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
JESD-609 codee4
memory density4831838208 bi
Memory IC TypeDDR DRAM MODULE
memory width72
Number of functions1
Number of ports1
Number of terminals184
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX72
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current0.12 A
Maximum slew rate1.98 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
V827464K24SA
64M x 72 HIGH PERFORMANCE
UNBUFFERED ECC DDR SDRAM MODULE
Features
184 Pin Unbuffered 67,108,864 x 72 bit
Organization DDR SDRAM Modules
Utilizes High Performance 32M x 8 DDR
SDRAM in TSOPII-66 Packages
Single +2.5V (± 0.2V) Power Supply
Single +2.6V (± 0.1V) Power Supply for DDR400
Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
All Inputs, Outputs are SSTL-2 Compatible
8196 Refresh Cycles every 64 ms
Serial Presence Detect (SPD)
DDR SDRAM Performance
Component Used
-6
Module Speed
D4
D3
-7
-75
D0
C0
-8
B1
Description
The V827464K24SA memory module is
organized 67,108,864 x 72 bits in a 184 pin memory
module. The 64M x 72 memory module uses 18
ProMOS 32M x 8 DDR SDRAM. The x72 modules
are ideal for use in high performance computer
systems where increased memory density and fast
access times are required.
B0
A1
Units
t
CK
Clock Frequency
166
143
133
125
t
CK
Clock Frequency
200
200
200
166
143
133
125
MHz
(PC333) (PC266A) (PC266B) (PC200)
(max.)
(PC400C) (PC400B) (PC400A) (PC333) (PC266A) (PC266B) (PC200)
(max.)
t
AC
Clock Access Time
6
7.5
t
AC
Clock Cycle Time
CAS Latency = 2.5
CAS Latency = 2
t
AC
t
AC
Clock Cycle Time
CAS Latency = 2.5
Clock Cycle Time
CAS Latency = 3
6
7.5
7
7.5
7.5
7.5
8
7.5
10
10
ns
6
5
6
7
7.5
8
ns
5
5
5
-
-
-
-
ns
t
RCD
tRP parameter
t
RP
tRCD parameter
4
4
3
3
3
3
3
3
2
2
3
3
2
2
CLK
CLK
V827464K24SA Rev. 1.0 December 2003
1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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