MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
4.4+/-0.1
1.6+/-0.1
LOT No.
3.9+/-0.3
3
1.5+/-0.1
0.
1
RoHS Compliance,
DESCRIPTION
Silicon MOSFET Power Transistor 30MHz,0.3W
OUTLINE DRAWING
1.5+/-0.1
RD00HHS1 is a MOS FET type transistor specifically
designed for HF RF amplifiers applications.
TYPE NAME
FEATURES
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
0.4 +0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
APPLICATION
For output stage of high power amplifiers in HF Band
mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel Temperature
Storage temperature
Thermal resistance
CONDITIONS RATINGS UNIT
Vgs=0V
30
V
Vds=0V
V
±10
Tc=25
°C
3.1
W
mW
Zg=Zl=50
Ω
10
mA
-
200
°C
-
150
-
-40 to +125
°C
°C/W
Junction to case
40
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
Vth
Pout
η
D
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=12.5V, Pin=4mW,
f=30MHz,Idq=50mA
MIN
-
-
1
0.3
55
LIMITS
TYP
MAX.
-
25
-
1
2
3
0.7
-
65
-
UNIT
uA
uA
V
W
%
Note : Above parameters , ratings , limits and conditions are subject to change.
RD00HHS1
MITSUBISHI ELECTRIC
1/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
Vgs-Ids CHARACTERISTICS
0.6
0.5
0.4
Ta=+25°C
Vds=10V
RoHS Compliance,
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
Silicon MOSFET Power Transistor 30MHz,0.3W
4
CHANNEL DISSIPATION
Pch(W)
3
Ids(A)
On PCB(*1) with Heat-sink
2
0.3
0.2
1
On PCB(*1)
0.1
0.0
0
1
2
3
Vgs(V)
4
5
0
0
40
80
120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
1.4
1.2
1.0
Ids(A)
0.8
0.6
0.4
0.2
Vgs=3V
Ta=+25°C
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vds VS. Ciss CHARACTERISTICS
20
Ta=+25°C
f=1MHz
15
Ciss(pF)
10
5
0
0
5
10
Vds(V)
15
20
Vgs=6V
Vgs=5V
Vgs=4V
0.0
0
2
4
6
Vds(V)
8
10
Vds VS. Coss CHARACTERISTICS
20
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
15
Coss(pF)
Crss(pF)
3
10
2
5
1
0
0
5
10
Vds(V)
15
20
0
0
5
10
Vds(V)
15
20
RD00HHS1
MITSUBISHI ELECTRIC
2/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
Pin-Po CHARACTERISTICS
100
Po
RoHS Compliance,
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
35
Po
Silicon MOSFET Power Transistor 30MHz,0.3W
100
Gp
1.2
1.0
Pout(W) , Idd(A)
0.8
0.6
0.4
0.2
0.0
0
2
4
6
Pin(mW)
8
10
Idd
Ta=25°C
f=30MHz
Vdd=12.5V
Idq=50mA
ηd
Po(dBm) , Gp(dB) ,
Idd(A)
30
25
20
15
10
80
ηd(%)
60
40
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=50mA
90
80
70
60
50
40
ηd(%)
10 Jan 2006
η½
20
0
-20 -15 -10 -5
0
Pin(dBm)
5
10
Vdd-Po CHARACTERISTICS
1.2
1.0
0.8
Po(W)
0.6
0.4
0.2
0.0
2
4
6
8 10
Vdd(V)
12
14
0
Po
Ta=25°C
f=30MHz
Pin=4mW
Icq=50mA
Zg=ZI=50 ohm
Vgs-Ids CHARACTORISTICS 2
120
0.6
0.5
Vds=10V
Tc=-25~+75°C
-25°C
+25°C
+75°C
Idd
80
Idd(mA)
Ids(A)
0.4
0.3
0.2
0.1
0.0
0
1
2
3
Vgs(V)
4
5
40
Vgs-gm CHARACTORISTICS
0.6
0.5
0.4
gm(S)
0.3
0.2
0.1
0.0
0
1
2
3
Vgs(V)
4
5
-25°C
+25°C
+75°C
Vds=10V
Tc=-25~+75°C
RD00HHS1
MITSUBISHI ELECTRIC
3/6
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
RoHS Compliance,
TEST CIRCUIT(f=30MHz)
Silicon MOSFET Power Transistor 30MHz,0.3W
V gg
V dd
330uF,50V
10uF,50V
C2
C1
180pF
RF-IN
3m m
7m m
L1
40pF
220pF
13m m
9m m
L2
10pF
9m m
7m m
82pF
1k OHM
2.5m m
7.5m m
6m m
470pF
15OHM
15pF
40pF
L3
470pF
RD00HHS 1
4m m
8m m
22m m
14m m
L4
RF-OUT
L1:LA L04NAR27(0.27m H)
L2:LA L04NA R39(0.39uH)
L3:LA L04NA R39(0.39uH)
L4:LAL04NA 1R0(1uH)
C1,C2:100pF,0.022uF,0.1uF in parallel
Note:B oard m aterial-glas s epox i s ubs trate
M ic ro s trip line width=1.0m m /50OHM ,er:4.8,t=0.6m m
RD00HHS1
MITSUBISHI ELECTRIC
4/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD00HHS1
S12
S22
(ang)
90.3
82.8
79.5
67.4
56.5
47.5
38.2
30.6
24.6
18.5
13.1
8.7
4.7
0.2
-2.8
-6.9
-9.8
-13.0
-15.0
-17.6
-20.8
-22.2
(mag)
0.920
0.919
0.918
0.898
0.866
0.824
0.781
0.745
0.711
0.685
0.665
0.649
0.640
0.630
0.625
0.623
0.623
0.623
0.627
0.630
0.634
0.640
(ang)
-2.7
-6.9
-11.2
-22.4
-32.8
-42.2
-50.4
-57.9
-64.6
-70.2
-75.5
-80.5
-85.2
-89.2
-93.3
-97.1
-100.7
-104.3
-107.7
-110.9
-113.9
-117.1
(mag)
0.003
0.008
0.013
0.025
0.035
0.042
0.048
0.053
0.055
0.057
0.058
0.058
0.059
0.058
0.057
0.056
0.055
0.053
0.051
0.049
0.048
0.046
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,0.3W
RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq.
[MHz]
10
30
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
(mag)
1.002
1.003
1.005
1.007
0.989
0.963
0.936
0.911
0.892
0.872
0.857
0.846
0.834
0.830
0.826
0.821
0.815
0.812
0.814
0.816
0.811
0.814
(ang)
-3.6
-9.9
-16.8
-33.5
-49.8
-64.0
-76.9
-87.9
-97.7
-106.2
-113.7
-120.1
-126.0
-131.0
-135.9
-140.2
-144.0
-147.5
-151.0
-153.9
-156.8
-159.5
(mag)
12.533
12.631
12.784
12.820
12.355
11.571
10.697
9.791
8.972
8.202
7.533
6.921
6.386
5.894
5.484
5.097
4.749
4.443
4.167
3.904
3.670
3.471
S21
(ang)
178.3
174.6
170.6
159.1
147.5
136.8
127.3
119.1
111.4
104.9
98.9
93.4
88.4
83.7
79.3
75.1
71.0
67.3
63.8
60.1
56.8
53.7
RD00HHS1
MITSUBISHI ELECTRIC
5/6
10 Jan 2006
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