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04021J8R2QASTR

Description
CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000004 uF, SURFACE MOUNT, 0201
CategoryPassive components   
File Size461KB,20 Pages
ManufacturerAVX
Download Datasheet Parametric View All

04021J8R2QASTR Overview

CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000004 uF, SURFACE MOUNT, 0201

04021J8R2QASTR Parametric

Parameter NameAttribute value
negative deviation5 %
Minimum operating temperature-55 Cel
Maximum operating temperature125 Cel
positive deviation5 %
Rated DC voltage urdc25 V
Processing package descriptionCHIP, ROHS COMPLIANT
each_compliYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateActive
Capacitor typeFILM CAPACITOR
capacitance4.00E-7 µF
dielectric materialsSILICON DIOXIDE AND NITRIDE
jesd_609_codee3
Manufacturer Series0201
Installation featuresSURFACE MOUNT
packaging shapeRECTANGULAR PACKAGE
Package SizeSMT
cking_methodTR, 7/13 INCH
seriesSIZE(ACCU-P)
size code0201
Temperature Coefficient-/+30ppm/Cel
terminal coatingTIN OVER NICKEL
Terminal shapeWRAPAROUND
heigh0.2250 mm
length0.6000 mm
width0.3250 mm
dditional_featureCAPACITANCE TOLERANCE IS 0.02 PICO FARAD
1
Thin-Film Technology
Accu-F / Accu-P
Thin-Film RF/Microwave Capacitors
®
®
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