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MMGZ5266SPT

Description
SILICON PLANAR POWER ZENER DIODES
File Size117KB,5 Pages
ManufacturerCHENMKO
Websitehttp://www.chenmko.com/
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MMGZ5266SPT Overview

SILICON PLANAR POWER ZENER DIODES

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT ZENER
SILICON PLANAR POWER ZENER DIODES
VOLTAGE RANGE 2.4V TO 91V
MMGZ5221SPT
THRU
MMGZ5270SPT
FEATURE
*
*
*
*
*
*
*
Small surface mounting type. (MINI-MELF)
High temperature soldering type.
ESD rating of class 3(>16 kV) per human body model.
Silicon planar zener diodes.
Silcon-oxide passivated junction.
Low temperature coefficient voltage
500 mW Rating on FR-4 or FR-5 Board
Mini-Melf
MECHANICAL
* MINI-MELF Packaging.
* Cathode indicated by polarity band.
* Mounting position: Any.
CATHODE BAND
0.4
0.4
1.4±0.1
(1)
(2)
+0.2
3.4
0.1
1.5Max.
CIRCUIT
(2)
(1)
Dimensions in millimeters
Mini-Melf
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation @T
A
=25
o
C
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
P
D
T
J
T
STG
VALUE
-
500
-65 to +175
-65 to +175
UNITS
-
mW
o
C
C
o
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Max. Instantaneous Forward Voltage at I
F=
10mA
SYMBOL
R
JA
MIN.
-
-
TYP.
-
-
MAX.
240
0.9
UNITS
o
C/W
V
F
Volts
2002-9
NOTES : 1. The JEDEC type numbers listd have a standaerd tolerance on the normal zener voltage of +10%, Suffix B=+5%, Suffix B=+2%.
2. The zener impedance is derived from 1KHz AC voltage, which results when an AC current having an RMS value equal to 10%
of DC zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
. Zener impedance is measured at two points to insure a sharp knee
on the breakdown curve to eliminate unstable units.
3. Valid provided that electrodes at distance of 10mm from case are kept ambient temperature.
4. Measured under thermal equilibrium and DC test conditions.
5. The rating listd in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave
or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I
ZT
, per JEDEC registration.
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