Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | conform to |
Maker | SAMSUNG |
package instruction | BGA, BGA165,11X15,40 |
Reach Compliance Code | unknown |
Maximum access time | 0.45 ns |
Maximum clock frequency (fCLK) | 250 MHz |
I/O type | SEPARATE |
JESD-30 code | R-PBGA-B165 |
JESD-609 code | e1 |
memory density | 18874368 bit |
Memory IC Type | STANDARD SRAM |
memory width | 36 |
Number of terminals | 165 |
word count | 524288 words |
character code | 512000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 512KX36 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | BGA |
Encapsulate equivalent code | BGA165,11X15,40 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 1.5/1.8,1.8 V |
Certification status | Not Qualified |
Maximum standby current | 0.21 A |
Minimum standby current | 1.7 V |
Maximum slew rate | 0.55 mA |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | TIN SILVER COPPER |
Terminal form | BALL |
Terminal pitch | 1 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 40 |