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K7J163682B-EI25T

Description
Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165
Categorystorage    storage   
File Size406KB,18 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
Download Datasheet Parametric View All

K7J163682B-EI25T Overview

Standard SRAM, 512KX36, 0.45ns, CMOS, PBGA165

K7J163682B-EI25T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerSAMSUNG
package instructionBGA, BGA165,11X15,40
Reach Compliance Codeunknown
Maximum access time0.45 ns
Maximum clock frequency (fCLK)250 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
memory density18874368 bit
Memory IC TypeSTANDARD SRAM
memory width36
Number of terminals165
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum standby current0.21 A
Minimum standby current1.7 V
Maximum slew rate0.55 mA
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
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