MCM69H618FN12 datasheet, PDF - EEWORLD Datasheet

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MCM69H618FN12: DescriptionCache SRAM, 64KX18, 12ns, BICMOS, PQCC52, PLASTIC, LCC-52; Categorystorage storage; File Size554KB，9 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MCM69H618FN12 Overview

Cache SRAM, 64KX18, 12ns, BICMOS, PQCC52, PLASTIC, LCC-52

MCM69H618FN12 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	PLASTIC, LCC-52
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	12 ns
Other features	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE
I/O type	COMMON
JESD-30 code	S-PQCC-J52
JESD-609 code	e0
length	19.1262 mm
memory density	1179648 bit
Memory IC Type	CACHE SRAM
memory width	18
Number of functions	1
Number of ports	1
Number of terminals	52
word count	65536 words
character code	64000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX18
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC52,.8SQ
Package shape	SQUARE
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	4.57 mm
Minimum standby current	3.14 V
Maximum slew rate	0.25 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	BICMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	19.1262 mm

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MCM69H618FN12 Related Products

	MCM69H618FN12	MCM69H618FN10
Description	Cache SRAM, 64KX18, 12ns, BICMOS, PQCC52, PLASTIC, LCC-52	Cache SRAM, 64KX18, 10ns, BICMOS, PQCC52, PLASTIC, LCC-52
Is it Rohs certified?	incompatible	incompatible
package instruction	PLASTIC, LCC-52	PLASTIC, LCC-52
Reach Compliance Code	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A
Maximum access time	12 ns	10 ns
Other features	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE
I/O type	COMMON	COMMON
JESD-30 code	S-PQCC-J52	S-PQCC-J52
JESD-609 code	e0	e0
length	19.1262 mm	19.1262 mm
memory density	1179648 bit	1179648 bit
Memory IC Type	CACHE SRAM	CACHE SRAM
memory width	18	18
Number of functions	1	1
Number of ports	1	1
Number of terminals	52	52
word count	65536 words	65536 words
character code	64000	64000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	64KX18	64KX18
Output characteristics	3-STATE	3-STATE
Exportable	YES	YES
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QCCJ	QCCJ
Encapsulate equivalent code	LDCC52,.8SQ	LDCC52,.8SQ
Package shape	SQUARE	SQUARE
Package form	CHIP CARRIER	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified
Maximum seat height	4.57 mm	4.57 mm
Minimum standby current	3.14 V	3.14 V
Maximum slew rate	0.25 mA	0.265 mA
Maximum supply voltage (Vsup)	3.465 V	3.465 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	YES	YES
technology	BICMOS	BICMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	J BEND
Terminal pitch	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
width	19.1262 mm	19.1262 mm

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