Product specification
Single Line TVS Diode
for ESD
FEATURES
350 Watts peak pulse power (tp=8/20μs)
Protects one I/O or power line
Low clamping voltage
Working voltage:3V, 5V,12V,15V,18V,24V,36V
Low leakage current
Solid-state silicon avalanche technology
MSL 1
SD03C-36C
Pb
Lead-free
SOD-323
APPLICATIONS
Cell Phone Handsets and Accessories
Microprocessor based equipment
Portable Instrumentation
Type No.
SD03C
□
SD05C
□
SD12C
□
SD15C
□
SD18C□
SD24C
□
SD36C
□
□:
none is for Lead Free package;
“G” is for Halogen Free package.
ORDERING INFORMATION
Marking
03C
05C
6/6
7/7
18C
8/8
36
Package Code
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
SOD-323
MAXIMUM RATING
@ Ta=25℃
Parameter
Peak pulse power(t
p
=8/20μs)
unless otherwise specified
Symbol
P
pk
V
PP
R
θjA
R
θjC
T
L
T
j
T
STG
Limits
350
30
454
170
260 (10 sec.)
-55 to+125
-55 to+150
Unit
W
kV
℃/W
℃/W
℃
℃
℃
ESD voltage(HBM waveform per IEC 6100-4-2)
Thermal resistance, junction to ambient air
Thermal Resistance Junction-to-Case
Lead soldering temperature
Operating temperature
Storage temperature
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Product specification
Single Line TVS Diode
for ESD
SD03C-36C
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
SD03C TVS for 3V Lines
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Clamping voltage
Reverse leakage current
Junction Capacitance
SD05C TVS for 5V Lines
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Clamping voltage
Reverse leakage current
Junction Capacitance
Symbol
V
RWM
V
(BR)R
V
C
I
R
C
J
6
Min.
Typ.
Max.
5
8
9.8
V
14.5
10
200
μA
pF
Unit
V
V
I
R
=1mA
I
PP
=5A,t
p
=8/20μs
I
PP
=24A,t
p
=8/20μs
V
RWM
=5V
V
R
=0V,f=1MHz
Conditions
Symbol
V
RWM
V
(BR)R
V
C
I
R
C
J
4
Min.
Typ.
Max.
3
6.5
7
V
10.5
10
300
μA
pF
I
PP
=20A,t
p
=8/20μs
V
RWM
=3V
V
R
=0V,f=1MHz
Unit
V
V
I
R
=1mA
I
PP
=1A,t
p
=8/20μs
Conditions
SD12C TVS for 12V Lines
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Clamping voltage
Reverse leakage current
Junction Capacitance
Symbol
V
RWM
V
(BR)R
V
C
I
R
C
J
13.3
Min.
Typ.
Max.
12
16
19
V
24
1
100
μA
pF
Unit
V
V
I
R
=1mA
I
PP
=5A,t
p
=8/20μs
I
PP
=15A,t
p
=8/20μs
V
RWM
=12V
V
R
=0V,f=1MHz
Conditions
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Product specification
Single Line TVS Diode
for ESD
SD15C TVS for 15V Lines
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Clamping voltage
Reverse leakage current
Junction Capacitance
Symbol
V
RWM
V
(BR)R
V
C
I
R
C
J
16.7
Min.
Typ.
Max.
15
20
27
V
40
1
75
μA
pF
Unit
V
V
SD03C-36C
Conditions
I
R
=1mA
I
PP
=5A,t
p
=8/20μs
I
PP
=10A,t
p
=8/20μs
V
RWM
=15V
V
R
=0V,f=1MHz
SD18C TVS for 18V Lines
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Clamping voltage
Reverse leakage current
Junction Capacitance
Symbol
V
RWM
V
(BR)R
V
C
I
R
C
J
20
28
V
35
1
70
μA
pF
I
PP
=8A,t
p
=8/20μs
V
RWM
=18V
V
R
=0V,f=1MHz
Min.
Typ.
Max.
18
Unit
V
V
I
R
=1mA
I
PP
=1A,t
p
=8/20μs
Conditions
SD24C TVS for 24V Lines
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Clamping voltage
Reverse leakage current
Junction Capacitance
Symbol
V
RWM
V
(BR)R
V
C
I
R
C
J
26.7
Min.
Typ.
Max.
24
33
40
V
44
1
50
μA
pF
Unit
V
V
I
R
=1mA
I
PP
=5A,t
p
=8/20μs
I
PP
=8A,t
p
=8/20μs
V
RWM
=24V
V
R
=0V,f=1MHz
Conditions
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Product specification
Single Line TVS Diode
for ESD
SD36C TVS for 36V Lines
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Clamping voltage
Reverse leakage current
Junction Capacitance
Symbol
V
RWM
V
(BR)R
V
C
70
I
R
C
J
1
40
μA
pF
39.6
Min.
Typ.
Max.
36
48
50
V
Unit
V
V
SD03C-36C
Conditions
I
R
=1mA
I
PP
=1A,t
p
=8/20μs
I
PP
=5A,t
p
=8/20μs
V
RWM
=36V
V
R
=0V,f=1MHz
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
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Product specification
Single Line TVS Diode
for ESD
PACKAGE OUTLINE
Plastic surface mounted package
SD03C-36C
SOD-323
SOD-323
K
A
C
Dim
A
B
B
Min
1.60
1.20
0.80
0.25
0.22
0.02
0.05
2.55
Max
1.80
1.40
0.90
0.35
0.42
0.10
0.15
2.75
C
D
E
D
H
E
J
H
J
K
All Dimensions in mm
SOLDERING FOOTPRINT
0.63
0.83
1.60
2.85
Unit
：mm
PACKAGE INFORMATION
Device
SD03C-SD24C
Package
SOD-323
Shipping
3000/Tape&Reel
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