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1N827

Description
Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-35,
CategoryDiscrete semiconductor    diode   
File Size97KB,2 Pages
ManufacturerCompensated Devices Inc.
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1N827 Overview

Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-35,

1N827 Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
Reach Compliance Codeunknown
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage6.2 V
surface mountNO
technologyZENER
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Voltage temperatureCoeff-Max0.062 mV/°C
Maximum voltage tolerance4.84%
• 1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN
JAN
,
JANTX, JANTXV
AND JANS
PER MIL-PRF-19500/159
• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION
1N821 thru 1N829A
and
1N821-1 thru 1N829-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
l
R
= 2
µ
A @ 25°C & V
R
= 3 Vdc
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
JEDEC
TYPE
NUMBER
ZENER
VOLTAGE
vz @ I
ZT
ZENER
TEST
CURRENT
I
ZT
MAXIMUM
ZENER
IMPEDANCE
(Note 1)
Z
ZT
VOLTAGE
TEMPERATURE
STABILITY
∆V
ZT
-55° to +100°
(Note 2)
EFFECTIVE
TEMPERATURE
COEFFICIENT
FIGURE 1
% / °C
0.01
0.01
0.01
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
VOLTS
1N821
1N821A
1N822
1N823
1N823A
1N824
1N825
1N825A
1N826
1N827
1N827A
1N828
1N829
1N829A
5.9—6.5
5.9—6.5
5.9—6.5
5.9—6.5
5.9—6.5
5.9—6.5
5.9—6.5
5.9—6.5
6.2—6.9
5.9—6.5
5.9—6.5
6.2—6.9
5.9—6.5
5.9—6.5
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
15
10
15
15
10
15
15
10
15
15
10
15
15
10
mV
96
96
96
48
48
48
19
19
20
9
9
10
5
5
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION:
Any.
† Double Anode: Electrical Specifications Apply Under Both Bias Polarities.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal
to 10% of lZT.
The maximum allowable change observed over the entire temperature range i.e.,
the diode voltage will not exceed the specified mV at any discrete temperature
between the established limits, per JEDEC standard No. 5.
NOTE 2
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

1N827 Related Products

1N827 1N827A 1N821 1N822 1N823 1N826 1N828 1N829A
Description Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-35, Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-35, Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-35, Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-35, Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-35, Zener Diode, 6.55V V(Z), 5.34%, 0.5W, Silicon, DO-35, Zener Diode, 6.55V V(Z), 5.34%, 0.5W, Silicon, DO-35, Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-35,
Maker Compensated Devices Inc. Compensated Devices Inc. Compensated Devices Inc. Compensated Devices Inc. Compensated Devices Inc. Compensated Devices Inc. Compensated Devices Inc. Compensated Devices Inc.
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Other features METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE ZENER DIODE
JEDEC-95 code DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Package body material GLASS GLASS GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum power dissipation 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Nominal reference voltage 6.2 V 6.2 V 6.2 V 6.2 V 6.2 V 6.55 V 6.55 V 6.2 V
surface mount NO NO NO NO NO NO NO NO
technology ZENER ZENER ZENER ZENER ZENER ZENER ZENER ZENER
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Voltage temperatureCoeff-Max 0.062 mV/°C 0.062 mV/°C 0.62 mV/°C 0.62 mV/°C 0.31 mV/°C 0.131 mV/°C 0.0655 mV/°C 0.031 mV/°C
Maximum voltage tolerance 4.84% 4.84% 4.84% 4.84% 4.84% 5.34% 5.34% 4.84%
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